As the minimum feature size of integrated circuit elements has shrunk below 7 nm, chemical
mechanical planarization (CMP) technology has grown by leaps and bounds over the past …

Chemical mechanical polishing (CMP) is the most effective technique to obtain global and
local planarization of metal and brittle surfaces. Conventionally, CMP slurries contain strong …

Chemical mechanical polishing slurry of copper usually contains more than four
compositions, in which strong acids, alkalis or hazardous chemicals are normally employed …

Multi-dimensional composite nanocontainers provided an opportunity to prolong the service
life of waterborne self-healing coatings through combining intelligent protection with …

As the most commonly used multilayer interconnect metal material of integrated circuits,
copper corrosion inhibition is a key technical problem in chemical mechanical polishing …

Aliphatic amino acids (AAs) were investigated as environmentally friendly alternatives to
benzotriazole (BTA) in the chemical mechanical planarization (CMP) process for Cu …

In the chemical mechanical polishing (CMP) process of barrier layer of multilayer copper
wiring in integrated circuits, it is necessary to add appropriate corrosion inhibitor into the …

Copper's superior electrical properties make it ideal for multi-layer interconnections in
integrated circuits. Chemical mechanical polishing (CMP) is the main method for achieving …

In chemical mechanical polishing (CMP) process, surface defects and contamination will be
introduced on the wafer surface due to interfacial chemical reactions and abrasive particles …

Abstract Glycine (GLY), potassium tartrate (PT), and hydroxyethylidene diphosphonic acid
(HEDP) have been used as effective complexing agents for chemical mechanical polishing …