A comprehensive review is done of different NBTI mechanisms and models proposed in the
literature over the past years. The Reaction-Diffusion (RD) model based comprehensive …

A comprehensive modeling framework is presented to predict the time kinetics of negative
bias temperature instability stress and recovery during and after dc and ac stresses and also …

An ultrafast (10-μs delay) measurement technique is used to characterize the negative bias
temperature instability-induced threshold voltage shift (ΔV T) in replacement metal gate …

Bias Temperature Instability (BTI) is a serious reliability concern and continues to threaten
the performance and lifetime of Complementary MOS (CMOS) devices and circuits. BTI …

Threshold voltage shift (ΔVT) due to Negative Bias Temperature Instability (NBTI) in p-
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …

This paper proposes and investigates a novel 4H‐SiC trench MOSFET (TMOS) with
integrated high‐K deep trench and gate dielectric (INHK‐TMOS). The integrated high‐K …

Independent Trap Generation (TG) monitors such as DCIV and SILC have been used during
NBTI, PBTI (and TDDB) stress in differently processed HKMG devices. TG from DCIV for …

A comprehensive modeling framework involving mutually uncorrelated contribution from
interface trap generation and hole trap** in pre-existing, process related gate insulator …

We have carried out a detailed study of the impact of oxygen vacancies (O), on the
performance and the lattice temperature variation in a stacked silicon nanosheet field effect …

Consistency of the recently proposed deterministic composite modeling framework for
Negative Bias Temperature Instability (NBTI) in large area devices is verified for stochastic …