In this paper we review the basic theoretical aspects as well as some important experimental
results of the band anticrossing effects in highly electronegativity-mismatched …

Abstract III–N–V semiconductors are promising materials for use in next-generation
multijunction solar cells because these materials can be lattice matched to substrates such …

In this paper, we carry out a comprehensive review of the nitrogen-induced modifications of
the electronic structure of Ga 1− y In y N x As 1− x alloys. We study in detail the behaviour of …

We present a comprehensive theoretical and experimental analysis of 1.3-μm
InGaAsN/GaAs lasers. After introducing the 10-band k/spl middot/p Hamiltonian which …

Recent high hydrostatic pressure experiments have shown that incorporation of small
amounts of nitrogen into conventional III–V compounds to form III–N–V alloys leads to …

Since their development in the 1990s, it has been discovered that diluted nitrides have
intriguing properties that are not only distinct from those of conventional semiconductor …

The many-impurity Anderson model is applied to compound semiconductor alloys in which
metallic anion atoms are partially substituted by highly electronegative atoms at low …

Interband transitions in GaAs 1− x N x/GaAs multiple quantum wells were studied at room
temperature by photomodulated reflectance spectroscopy as a function of well width (3–9 …

The electronic band structure of highly mismatched alloys (HMAs) was very successfully
explored using electromodulation (EM) spectroscopy, ie, photoreflectance (PR) …

We present an overview of our optical characterization work on dilute nitride quantum well
(QW) samples. A simple model for calculating interband transition energies is constructed …