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Mesoscale trumps nanoscale: metallic mesoscale contact morphology for improved light trap**, optical absorption and grid conductance in silicon solar cells
We report on a computational study exploring the design of mesoscale metallic front
contacts for solar cells. We investigated silver contact structures with circle, triangle and …
contacts for solar cells. We investigated silver contact structures with circle, triangle and …
Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height
ABSTRACT A nanowire transistor includes undoped source and drain regions electrically
coupled with a channel region. A source stack that is electrically isolated from a gate …
coupled with a channel region. A source stack that is electrically isolated from a gate …
Effect of realistic metal electronic structure on the lower limit of contact resistivity of epitaxial metal-semiconductor contacts
G Hegde, R Chris Bowen - Applied Physics Letters, 2014 - pubs.aip.org
The effect of realistic metal electronic structure on the lower limit of resistivity in [100]
oriented n-Si is investigated using full band Density Functional Theory and Semi-Empirical …
oriented n-Si is investigated using full band Density Functional Theory and Semi-Empirical …
Performance and variability studies of InGaAs gate-all-around nanowire MOSFETs
Furthering Si CMOS scaling requires development of high-mobility channel materials and
advanced device structures to improve the electrostatic control. We demonstrate the …
advanced device structures to improve the electrostatic control. We demonstrate the …
Atomistic tight-binding study of contact resistivity in Si/SiGe PMOS schottky contacts
The metal-semiconductor contact resistivity has started to play a critical role for the overall
device performance as Si is reaching 10-nm size ranges. The International Technology …
device performance as Si is reaching 10-nm size ranges. The International Technology …
MIS contact structure with metal oxide conductor
An electrical contact structure (an MIS contact) includes one or more conductors (M-Layer), a
semiconductor (S-Layer), and an interfacial dielectric layer (I-Layer) of less than 4 nm …
semiconductor (S-Layer), and an interfacial dielectric layer (I-Layer) of less than 4 nm …
Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height
(57) ABSTRACT A nanowire transistor includes undoped source and drain regions
electrically coupled with a channel region. A source stack that is electrically isolated from a …
electrically coupled with a channel region. A source stack that is electrically isolated from a …
An investigation of transmission line modeling test structure in TCAD
As semiconductor devices shrinks down to sub 10nm range, contact resistance has become
a significant performance factor that needs to be studied. Existing test structures such as …
a significant performance factor that needs to be studied. Existing test structures such as …
Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height
(57) ABSTRACT A nanowire transistor includes undoped source and drain regions
electrically coupled with a channel region. A source stack that is electrically isolated from a …
electrically coupled with a channel region. A source stack that is electrically isolated from a …
[HTML][HTML] On the feasibility of ab initio electronic structure calculations for cu using a single s orbital basis
G Hegde, RC Bowen - AIP Advances, 2015 - pubs.aip.org
The accuracy of a single s-orbital representation of Cu towards enabling multi-thousand
atom ab initio calculations of electronic structure is evaluated in this work. If an electrostatic …
atom ab initio calculations of electronic structure is evaluated in this work. If an electrostatic …