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Theory of AlN, GaN, InN and their alloys
This review focuses on the fundamental properties of III–V compound semiconductors from a
theoretical or computational standpoint. Its purpose is to summarize the contributions of …
theoretical or computational standpoint. Its purpose is to summarize the contributions of …
The fundamental surface science of wurtzite gallium nitride
A review is presented that covers the experimental and theoretical literature relating to the
preparation, electronic structure and chemical and physical properties of the surfaces of the …
preparation, electronic structure and chemical and physical properties of the surfaces of the …
[ספר][B] Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth
H Morkoç - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
Density-functional calculations for III-V nitrides using the local-density approximation and the generalized gradient approximation
We have performed density-functional calculations for III-V nitrides using the
pseudopotential plane-wave method where the d states of the Ga and In atoms are included …
pseudopotential plane-wave method where the d states of the Ga and In atoms are included …
Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN
The results of first-principles full-potential linear muffin-tin orbital calculations of the elastic
constants and related structural and electronic properties of BN, AlN, GaN, and InN in both …
constants and related structural and electronic properties of BN, AlN, GaN, and InN in both …
Effects of cation states on the structural and electronic properties of III-nitride and II-oxide wide-band-gap semiconductors
Using first-principles methods based on density functional theory within the local density
approximation (LDA) we calculate the structural and electronic properties of wurtzite MgO …
approximation (LDA) we calculate the structural and electronic properties of wurtzite MgO …
I–II–V and I–III–IV half-Heusler compounds for optoelectronic applications: Comparative ab initio study
We have investigated structural, electronic and optical properties of 96 half-Heusler
materials, including compounds of I–II–V and I–III–IV types using first-principles calculations …
materials, including compounds of I–II–V and I–III–IV types using first-principles calculations …
Study of oxygen chemisorption on the GaN (0001)‐(1× 1) surface
Clean, ordered GaN (0001)‐(1× 1) surfaces are prepared by sputtering with nitrogen ions
followed by annealing in ultrahigh vacuum. The surfaces are subsequently exposed at room …
followed by annealing in ultrahigh vacuum. The surfaces are subsequently exposed at room …
Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and Al x Ga 1− x N thin films at low temperatures
The authors report on the use of hollow cathode plasma for low-temperature plasma-
assisted atomic layer deposition (PA-ALD) of crystalline AlN, GaN and AlxGa1− xN thin films …
assisted atomic layer deposition (PA-ALD) of crystalline AlN, GaN and AlxGa1− xN thin films …
Effective masses and valence-band splittings in GaN and AlN
Full-potential (FP) linearized muffin-tin orbital (LMTO) calculations within the local density
approximation are used to determine the conduction and valence-band effective mass …
approximation are used to determine the conduction and valence-band effective mass …