A Review on MoS2 Properties, Synthesis, Sensing Applications and Challenges
Molybdenum disulfide (MoS2) is one of the compounds discussed nowadays due to its
outstanding properties that allowed its usage in different applications. Its band gap and its …
outstanding properties that allowed its usage in different applications. Its band gap and its …
A Review on MoS2 Energy Applications: Recent Developments and Challenges
Molybdenum disulfide (MoS2) is a promising transition metal dichalcogenide (TMD) that has
exceptional electronic, magnetic, optical, and mechanical properties. It can be …
exceptional electronic, magnetic, optical, and mechanical properties. It can be …
Hybrid organic–inorganic perovskite halide materials for photovoltaics towards their commercialization
Hybrid organic–inorganic perovskite (HOIP) photovoltaics have emerged as a promising
new technology for the next generation of photovoltaics since their first development 10 …
new technology for the next generation of photovoltaics since their first development 10 …
Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics
We report on room-temperature plasmonic detection of sub-terahertz radiation by
InAlAs/InGaAs/InP high electron mobility transistors with an asymmetric dual-grating-gate …
InAlAs/InGaAs/InP high electron mobility transistors with an asymmetric dual-grating-gate …
Efficient production of few-layer black phosphorus by liquid-phase exfoliation
Phosphorene is a new two-dimensional material that has recently attracted much attention
owing to its fascinating electrical, optical, thermal and chemical properties. Here, we report …
owing to its fascinating electrical, optical, thermal and chemical properties. Here, we report …
InP-and GaAs-based plasmonic high-electron-mobility transistors for room-temperature ultrahigh-sensitive terahertz sensing and imaging
T Watanabe, SA Boubanga-Tombet… - IEEE sensors …, 2012 - ieeexplore.ieee.org
This paper reviews recent advances in the design and performance of our original InP-and
GaAs-based plasmonic high-electron-mobility transistors (HEMTs) for ultrahighly-sensitive …
GaAs-based plasmonic high-electron-mobility transistors (HEMTs) for ultrahighly-sensitive …
An improved model for non-resonant terahertz detection in field-effect transistors
S Preu, S Kim, R Verma, PG Burke… - Journal of Applied …, 2012 - pubs.aip.org
Transistors operating well above the frequencies at which they have gain can still rectify
terahertz currents and voltages, and have attracted interest as room-temperature terahertz …
terahertz currents and voltages, and have attracted interest as room-temperature terahertz …
Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure
T Watanabe, SB Tombet, Y Tanimoto, Y Wang… - Solid-State …, 2012 - Elsevier
We report on ultrahigh sensitive, broadband terahertz (THz) detectors based on asymmetric
dual-grating-gate (A-DGG) high electron mobility transistors, demonstrating a record …
dual-grating-gate (A-DGG) high electron mobility transistors, demonstrating a record …
Experimental and Theoretical Investigation of the Synthesis, Electronic and Magnetic Properties of MnFe2O4 Spinel Ferrite
MnFe2O4 ferrite nanoparticle was synthesized via the sol–gel method, and structural,
morphology and magnetic characteristics were investigated. X-ray diffraction analysis …
morphology and magnetic characteristics were investigated. X-ray diffraction analysis …
[HTML][HTML] A graphene-based THz selective absorber with absorptivity 95% and wide-range electrical tunability
A growing adoption of Terahertz (THz) frequency across various applications is witnessed in
the recent years. This specific frequency range is said to yield a breakthrough in high-speed …
the recent years. This specific frequency range is said to yield a breakthrough in high-speed …