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[HTML][HTML] Molecular beam epitaxy of layered group III metal chalcogenides on GaAs (001) substrates
Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is
an inevitable step in realizing novel devices based on 2D materials and heterostructures …
an inevitable step in realizing novel devices based on 2D materials and heterostructures …
Growth and characterization of In2Se3 epitaxial films by molecular beam epitaxy
Structural control of In2Se3 films was attempted by molecular beam epitaxy (MBE). In2Se3
epitaxial films with layered structure based on zincblende structure were successfully grown …
epitaxial films with layered structure based on zincblende structure were successfully grown …
Electronic properties of van der Waals-epitaxy films and interfaces
The layered chalcogenides are considered to be prototypes of two-dimensional (2D)
inorganic materials. Their basic structural, electronic and physical properties have …
inorganic materials. Their basic structural, electronic and physical properties have …
Electronic properties of 2D layered chalcogenide surfaces and interfaces grown by (quasi) van der Waals epitaxy
The growth of two-dimensional layered chalcogenides on two-or three-dimensional
substrates, named (quasi) van der Waals epitaxy, has been pioneered by the group of A …
substrates, named (quasi) van der Waals epitaxy, has been pioneered by the group of A …
Investigation of built-in electric fields at the GaSe/GaAs interface by photoreflectance spectroscopy
Built-in electric fields appear during the molecular-beam epitaxy of GaSe on a GaAs (001)
substrate at the GaSe/GaAs interface, the presence of the fields is evidenced by Franz …
substrate at the GaSe/GaAs interface, the presence of the fields is evidenced by Franz …
Epitaxial single‐crystal of GaSe epilayers grown on ac‐sapphire substrate by molecular beam epitaxy
In this study, hetero‐epitaxy of GaSe epilayers on ac‐sapphire substrate achieved using
molecular beam epitaxy was demonstrated. The GaSe epitaxial growth was monitored using …
molecular beam epitaxy was demonstrated. The GaSe epitaxial growth was monitored using …
Allotropic Ga 2 Se 3/GaSe nanostructures grown by van der Waals epitaxy: narrow exciton lines and single-photon emission
The ability to emit narrow exciton lines, preferably with a clearly defined polarization, is one
of the key conditions for the use of nanostructures based on III–VI monochalcogenides and …
of the key conditions for the use of nanostructures based on III–VI monochalcogenides and …
Microstructure evolution of GaSe thin films grown on GaAs (100) by molecular beam epitaxy
ZR Dai, SR Chegwidden, LE Rumaner… - Journal of applied …, 1999 - pubs.aip.org
GaSe thin films were grown on a GaAs (100) substrate by molecular beam epitaxy.
Microstructures of the thin films and interface were characterized by transmission electron …
Microstructures of the thin films and interface were characterized by transmission electron …
Bonding and Optical Anisotropy of Vacancy-Ordered Ga 2Se 3
The bonding, electronic structures and dielectric functions of vacancy-ordered orthorhombic
and monoclinic Ga 2 Se 3 are calculated by using the ab initio pseudopotential method and …
and monoclinic Ga 2 Se 3 are calculated by using the ab initio pseudopotential method and …
Molecular-beam epitaxy of two-dimensional gase layers on GaAs (001) and GaAs (112) substrates: structural and optical properties
The results of studies of the structural and optical properties of two-dimensional GaSe layers
grown by molecular-beam epitaxy on GaAs (001) and GaAs (112) substrates using a valve …
grown by molecular-beam epitaxy on GaAs (001) and GaAs (112) substrates using a valve …