Synergy between nanomaterials and volatile organic compounds for non-invasive medical evaluation

YY Broza, R Vishinkin, O Barash, MK Nakhleh… - Chemical Society …, 2018 - pubs.rsc.org
This article is an overview of the present and ongoing developments in the field of
nanomaterial-based sensors for enabling fast, relatively inexpensive and minimally (or non-) …

Carbon nanotube thin films: fabrication, properties, and applications

L Hu, DS Hecht, G Gruner - Chemical reviews, 2010 - ACS Publications
Nanoscale materials, defined as having at least one dimension less than 100 nm, have
received steadily growing interest due to their unique properties and application potential …

Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances

H Qiu, L Pan, Z Yao, J Li, Y Shi, X Wang - Applied Physics Letters, 2012 - pubs.aip.org
Two-dimensional transition-metal dichalcogenides such as MoS 2 are promising channel
materials for transistor scaling. Here, we report the performance and environmental effects …

Low-voltage high-performance flexible digital and analog circuits based on ultrahigh-purity semiconducting carbon nanotubes

T Lei, LL Shao, YQ Zheng, G Pitner, G Fang… - Nature …, 2019 - nature.com
Carbon nanotube (CNT) thin-film transistor (TFT) is a promising candidate for flexible and
wearable electronics. However, it usually suffers from low semiconducting tube purity, low …

All-printed and roll-to-roll-printable 13.56-MHz-operated 1-bit RF tag on plastic foils

M Jung, J Kim, J Noh, N Lim, C Lim… - … on Electron Devices, 2010 - ieeexplore.ieee.org
An all-printed rectifier that can provide at least 10 V dc from a 13.56-MHz radio frequency
identification (RFID) reader and an all-printed ring oscillator that can generate at least 100 …

Graphene on a hydrophobic substrate: do** reduction and hysteresis suppression under ambient conditions

M Lafkioti, B Krauss, T Lohmann, U Zschieschang… - Nano …, 2010 - ACS Publications
The intrinsic do** level of graphene prepared by mechanical exfoliation and standard
lithography procedures on thermally oxidized silicon varies significantly and seems to …

Long range interactions in nanoscale science

RH French, VA Parsegian, R Podgornik, RF Rajter… - Reviews of Modern …, 2010 - APS
Our understanding of the “long range” electrodynamic, electrostatic, and polar interactions
that dominate the organization of small objects at separations beyond an interatomic bond …

Completely printed, flexible, stable, and hysteresis‐free carbon nanotube thin‐film transistors via aerosol jet printing

C Cao, JB Andrews, AD Franklin - Advanced Electronic …, 2017 - Wiley Online Library
Nanomaterials offer an attractive solution to the challenges faced for low‐cost printed
electronics, with applications ranging from additively manufactured sensors to wearables …

Carbon nanotubes based transistors as gas sensors: State of the art and critical review

P Bondavalli, P Legagneux, D Pribat - Sensors and Actuators B: Chemical, 2009 - Elsevier
In this paper we present recent studies concerning gas sensors based on carbon nanotube
field effect transistors (CNTFETs). Although these devices have allowed one to realize …

Intrinsic do** and gate hysteresis in graphene field effect devices fabricated on SiO2 substrates

P Joshi, HE Romero, AT Neal, VK Toutam… - Journal of Physics …, 2010 - iopscience.iop.org
We have studied the intrinsic do** level and gate hysteresis of graphene-based field effect
transistors (FETs) fabricated over Si/SiO 2 substrates. It was found that the high p-do** …