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Droplet epitaxy for advanced optoelectronic materials and devices
Droplet epitaxy was proposed to fabricate quantum dots in the early 1990s. Even though
many research efforts have been devoted to droplet epitaxy since then, it is only until …
many research efforts have been devoted to droplet epitaxy since then, it is only until …
Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy
Normal incident photodetection at mid infrared spectral region is achieved using the
intersublevel transitions from strain-free GaAs quantum dot pairs in Al0. 3Ga0. 7As matrix …
intersublevel transitions from strain-free GaAs quantum dot pairs in Al0. 3Ga0. 7As matrix …
Super low density InGaAs semiconductor ring-shaped nanostructures
We report on the ability to fabricate super low density InGaAs semiconductor ring-shaped
nanocrystals on a GaAs (100) surface by molecular beam epitaxy. Specifically, we …
nanocrystals on a GaAs (100) surface by molecular beam epitaxy. Specifically, we …
Annealing temperature effect on self-assembled Au droplets on Si (111)
We investigate the effect of annealing temperature on self-assembled Au droplets on Si
(111). The annealing temperature is systematically varied while fixing other growth …
(111). The annealing temperature is systematically varied while fixing other growth …
Extremely high-density GaAs quantum dots grown by droplet epitaxy
We report the fabrication of extremely high-density GaAs quantum dots (QDs) by droplet
epitaxy. We investigated the dependence of temperature and coverage on the dot density …
epitaxy. We investigated the dependence of temperature and coverage on the dot density …
Observation of change in critical thickness of In droplet formation on GaAs (100)
We present a study on the formation of In droplets on GaAs (100) substrates as functions of
substrate temperature and monolayer (ML) deposition by using molecular beam epitaxy …
substrate temperature and monolayer (ML) deposition by using molecular beam epitaxy …
GaAs∕ AlGaAs quantum dot laser fabricated on GaAs (311) A substrate by droplet epitaxy
We have demonstrated photopumped laser action of self-assembled Ga As∕ Al Ga As
quantum dots (QDs) grown on GaAs (311) A substrate by droplet epitaxy. Due to the short …
quantum dots (QDs) grown on GaAs (311) A substrate by droplet epitaxy. Due to the short …
Extremely high-and low-density of Ga droplets on GaAs {111} A, B: Surface-polarity dependence
Formation processes of Ga droplets on polar (111) A and (111) B surfaces of GaAs have
been investigated. A single Ga atom forms a stable nucleus on the (111) A surface, so that …
been investigated. A single Ga atom forms a stable nucleus on the (111) A surface, so that …
Design of nanostructure complexes by droplet epitaxy
We demonstrate a number of unseen self-assembled nanostructure complexes fabricated
on various GaAs surface indexes by droplet epitaxy. Even under identical growth conditions …
on various GaAs surface indexes by droplet epitaxy. Even under identical growth conditions …
Systematic study on the self-assembled hexagonal Au voids, nano-clusters and nanoparticles on GaN (0001)
Au nano-clusters and nanoparticles (NPs) have been widely utilized in various electronic,
optoelectronic, and bio-medical applications due to their great potentials. The size, density …
optoelectronic, and bio-medical applications due to their great potentials. The size, density …