Droplet epitaxy for advanced optoelectronic materials and devices

J Wu, ZM Wang - Journal of Physics D: Applied Physics, 2014 - iopscience.iop.org
Droplet epitaxy was proposed to fabricate quantum dots in the early 1990s. Even though
many research efforts have been devoted to droplet epitaxy since then, it is only until …

Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy

J Wu, D Shao, VG Dorogan, AZ Li, S Li… - Nano …, 2010 - ACS Publications
Normal incident photodetection at mid infrared spectral region is achieved using the
intersublevel transitions from strain-free GaAs quantum dot pairs in Al0. 3Ga0. 7As matrix …

Super low density InGaAs semiconductor ring-shaped nanostructures

JH Lee, ZM Wang, ME Ware… - Crystal Growth and …, 2008 - ACS Publications
We report on the ability to fabricate super low density InGaAs semiconductor ring-shaped
nanocrystals on a GaAs (100) surface by molecular beam epitaxy. Specifically, we …

Annealing temperature effect on self-assembled Au droplets on Si (111)

M Sui, MY Li, ES Kim, J Lee - Nanoscale research letters, 2013 - Springer
We investigate the effect of annealing temperature on self-assembled Au droplets on Si
(111). The annealing temperature is systematically varied while fixing other growth …

Extremely high-density GaAs quantum dots grown by droplet epitaxy

M Jo, T Mano, Y Sakuma, K Sakoda - Applied Physics Letters, 2012 - pubs.aip.org
We report the fabrication of extremely high-density GaAs quantum dots (QDs) by droplet
epitaxy. We investigated the dependence of temperature and coverage on the dot density …

Observation of change in critical thickness of In droplet formation on GaAs (100)

JH Lee, ZM Wang, GJ Salamo - Journal of Physics: Condensed …, 2007 - iopscience.iop.org
We present a study on the formation of In droplets on GaAs (100) substrates as functions of
substrate temperature and monolayer (ML) deposition by using molecular beam epitaxy …

GaAs∕ AlGaAs quantum dot laser fabricated on GaAs (311) A substrate by droplet epitaxy

T Mano, T Kuroda, K Mitsuishi, Y Nakayama… - Applied Physics …, 2008 - pubs.aip.org
We have demonstrated photopumped laser action of self-assembled Ga As∕ Al Ga As
quantum dots (QDs) grown on GaAs (311) A substrate by droplet epitaxy. Due to the short …

Extremely high-and low-density of Ga droplets on GaAs {111} A, B: Surface-polarity dependence

A Ohtake, N Ha, T Mano - Crystal Growth & Design, 2015 - ACS Publications
Formation processes of Ga droplets on polar (111) A and (111) B surfaces of GaAs have
been investigated. A single Ga atom forms a stable nucleus on the (111) A surface, so that …

Design of nanostructure complexes by droplet epitaxy

JH Lee, ZM Wang, ZY AbuWaar… - Crystal Growth and …, 2009 - ACS Publications
We demonstrate a number of unseen self-assembled nanostructure complexes fabricated
on various GaAs surface indexes by droplet epitaxy. Even under identical growth conditions …

Systematic study on the self-assembled hexagonal Au voids, nano-clusters and nanoparticles on GaN (0001)

P Pandey, M Sui, MY Li, Q Zhang, ES Kim, J Lee - PloS one, 2015 - journals.plos.org
Au nano-clusters and nanoparticles (NPs) have been widely utilized in various electronic,
optoelectronic, and bio-medical applications due to their great potentials. The size, density …