Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …

Power modules are core components of inverters in electric vehicles and their packaging
technology has a critical impact on system performance and reliability. Conventional single …

The advancement of silicon carbide (SiC) power devices with voltage ratings exceeding 10
kV is expected to revolutionize medium-and high-voltage systems. However, present power …

Planar, double-side cooled power modules are emerging in electric-drive inverters because
of their low profile, better heat extraction, and lower package parasitic inductances …

Wide bandgap (WBG) power devices with voltage ratings exceeding 10 kV have the
potential to revolutionize medium-and high-voltage systems due to their high-speed …

Cu clip-bonding is a promising packaging method for lower resistance, lower inductance,
and higher reliability than wire-bonding. Previous studies only simply replace bond wires …

This paper presents a vision for the future of 3D packaging and integration of silicon carbide
(SiC) power modules. Several major achievements and novel architectures in SiC modules …

A new technique for the packaging of IGBT modules has been developed. The components
are sandwiched between two direct bond copper (DBC) substrates with aluminum nitride …

Medium-voltage silicon carbide (SiC) power modules are a critical component in grid-bound
power conversion systems, and the packaging of these modules dictates the performance …

Silicon carbide (SiC) devices are capable of high switching speeds and also enable high
switching frequency in power electronic converters. However, this feature poses substantial …