This article reviews recent developments in nanowire‐based photovoltaics (PV) with an
emphasis on III–V semiconductors including growth mechanisms, device fabrication and …

This review will focus on the synthesis, arrangement, structural assembly, for current and
future applications, of 1D nanomaterials (tubes, wires, rods) in 2D and 3D ordered …

Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …

Crystal phase switching between the zincblende and wurtzite structures in III–V nanowires is
crucial from the fundamental viewpoint as well as for electronic and photonic applications of …

Selective-area growth is a promising technique for enabling of the fabrication of the scalable
III–V nanowire networks required to test proposals for Majorana-based quantum computing …

We report on the epitaxial growth of large-area position-controlled self-catalyzed GaAs
nanowires (NWs) directly on Si by molecular beam epitaxy (MBE). Nanohole patterns are …

We report and detail a method to achieve growth of vertical self-catalyzed GaAs nanowires
directly on Si (111) with a near-perfect vertical yield, using electron-beam-defined arrays of …

Designing strategies to reach monodispersity in fabrication of semiconductor nanowire
ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire …

Self-catalyzed growth of GaAs nanowires by molecular beam epitaxy on (111) Si substrates
is investigated by introducing Al x Ga1–x As time markers. The nanowire elongation rate is …

We report on the new mode of the vapor− liquid− solid nanowire growth with a droplet
wetting the sidewalls and surrounding the nanowire rather than resting on its top. It is shown …