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Status and outlook of metal–inorganic semiconductor–metal photodetectors
Metal–inorganic semiconductor–metal photodetectors (MSM‐PDs) have received great
attention in many areas, such as optical fiber communication, sensing, missile guidance …
attention in many areas, such as optical fiber communication, sensing, missile guidance …
All‐inorganic perovskite photodetectors with ultrabroad linear dynamic range for weak‐light imaging applications
Linear dynamic range (LDR) and weak‐light detection limit of photodetectors (PDs) directly
determine the imaging resolution and signal‐to‐noise ratio (SNR) in weak‐light condition …
determine the imaging resolution and signal‐to‐noise ratio (SNR) in weak‐light condition …
Toward photonic–electronic convergence based on heterogeneous platform of merging lithium niobate into silicon
The rapid development of fabrication techniques has boosted the resurgence of integrated
photonics based on lithium niobate (LN). While thin-film LN is available and has been a …
photonics based on lithium niobate (LN). While thin-film LN is available and has been a …
Autonomous reconstitution of fractured hybrid perovskite single crystals
The outstanding performance and facile processability turn hybrid organic–inorganic
perovskites into one of the most sought‐after classes of semiconducting materials for …
perovskites into one of the most sought‐after classes of semiconducting materials for …
Planar multilayered 2D GeAs Schottky photodiode for high-performance visible–near-infrared photodetection
Novel group IV-V 2D semiconductors (eg, GeAs and SiAs) have arisen as an attractive
candidate for broad-band photodetection and optoelectronic applications. This 2D family …
candidate for broad-band photodetection and optoelectronic applications. This 2D family …
Voltage-tunable dual-band Ge/Si photodetector operating in VIS and NIR spectral range
Extending and controlling the spectral range of light detectors is very appealing for several
sensing and imaging applications. Here we report on a normal incidence dual band …
sensing and imaging applications. Here we report on a normal incidence dual band …
Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect …
Abstract A CMOS-compatible infrared (IR; 1200–1700 nm) detector based on Ge quantum
dots (QDs) decorated on a single Si-nanowire channel on a silicon-on-insulator (SOI) …
dots (QDs) decorated on a single Si-nanowire channel on a silicon-on-insulator (SOI) …
[HTML][HTML] Metal-semiconductor-metal GeSn photodetectors on silicon for short-wave infrared applications
Metal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic
integration with other optical components of the photonic circuits because of the planar …
integration with other optical components of the photonic circuits because of the planar …
CuO nanowire-based metal semiconductor metal infrared photodetector
Abstract Metal–semiconductor-metal (MSM) infrared photodetector-based Ag/CuO NW/Ag
was fabricated using glancing angle deposition technique integrated RF sputtering machine …
was fabricated using glancing angle deposition technique integrated RF sputtering machine …
Multilayer 2D germanium phosphide (GeP) infrared phototransistor
Layered two-dimensional (2D) materials with broadband photodetection capability have
tremendous potential in the design and engineering of future optoelectronics devices. To …
tremendous potential in the design and engineering of future optoelectronics devices. To …