Abstract Source‐gated transistors (SGTs), which are typically realized by introducing a
source barrier in staggered thin‐film transistors (TFTs), exhibit many advantages over …

Source-gated transistors are a new driver of low-power high-gain thin-film electronics.
However, source-gated transistors based on organic semiconductors are not widely …

The contact resistance of organic field-effect transistors is revisited to address its
fundamental origin, parametric interplays, and technological implications. In a time when …

Emerging large-area technologies based on organic transistors are enabling the fabrication
of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are …

A physical description of low-field behavior of a Schottky source-gated transistor (SGT) is
outlined where carriers crossing the source barrier by thermionic emission are restricted by …

This review aims at introducing a vertical integration approach as a promising new driver of
field-effect transistor circuits and systems, which can overcome limitations of flexible and …

Contact effects have been analyzed, by using numerical simulations, in fully printed p-
channel OTFTs based on a pentacene derivative as organic semiconductor and with Au …

We have analyzed the characteristics of hydrogenated amorphous silicon source gated
transistors (SGTs) by using numerical simulations and we found that the original SGT …

A unified drain current model of complementary (p-and n-type) organic thin film transistors
(OTFTs) is presented. The model is physically based and takes into account the detailed …

Sustainable green electronics is increasingly needed for a multitude of new applications that
will fill daily life in the coming decades. The search for new semiconductor materials that can …