Preparation methods of different nanomaterials for various potential applications: A review

AM El-Khawaga, A Zidan… - Journal of Molecular …, 2023 - Elsevier
Nanomaterials are an interesting class of materials that include a wide variety of samples
with at least one dimension between 1 and 100 nm. Nanomaterials are cornerstones of …

Nanowire electronics: from nanoscale to macroscale

C Jia, Z Lin, Y Huang, X Duan - Chemical reviews, 2019 - ACS Publications
Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …

SnO2: A comprehensive review on structures and gas sensors

S Das, V Jayaraman - Progress in Materials Science, 2014 - Elsevier
Metal oxides possess exceptional potential as base materials in emerging technologies. In
recent times, significant amount of research works is carried out on these materials to assess …

Application of silicon nanowire field effect transistor (SiNW-FET) biosensor with high sensitivity

H Li, D Li, H Chen, X Yue, K Fan, L Dong, G Wang - Sensors, 2023 - mdpi.com
As a new type of one-dimensional semiconductor nanometer material, silicon nanowires
(SiNWs) possess good application prospects in the field of biomedical sensing. SiNWs have …

[HTML][HTML] Silicon nanowire growth on carbon cloth for flexible Li-ion battery anodes

D Storan, SA Ahad, R Forde, S Kilian, TE Adegoke… - Materials Today …, 2022 - Elsevier
Binder and conductive additive-free Si nanowires (NWs) grown directly on the current
collector have shown great potential as next generation Li-ion battery anodes. However, low …

CMOS-compatible silicon nanowire field-effect transistor biosensor: Technology development toward commercialization

DP Tran, TTT Pham, B Wolfrum, A Offenhäusser… - Materials, 2018 - mdpi.com
Owing to their two-dimensional confinements, silicon nanowires display remarkable optical,
magnetic, and electronic properties. Of special interest has been the development of …

Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires

S Biswas, J Doherty, D Saladukha, Q Ramasse… - Nature …, 2016 - nature.com
The development of non-equilibrium group IV nanoscale alloys is critical to achieving new
functionalities, such as the formation of a direct bandgap in a conventional indirect bandgap …

[HTML][HTML] The structural and optical properties of black silicon by inductively coupled plasma reactive ion etching

M Steglich, T Käsebier, M Zilk, T Pertsch… - Journal of Applied …, 2014 - pubs.aip.org
Black Silicon nanostructures are fabricated by Inductively Coupled Plasma Reactive Ion
Etching (ICP-RIE) in a gas mixture of SF 6 and O 2 at non-cryogenic temperatures. The …

Atomic scale strain relaxation in axial semiconductor III–V nanowire heterostructures

M de la Mata, C Magén, P Caroff, J Arbiol - Nano letters, 2014 - ACS Publications
Combination of mismatched materials in semiconductor nanowire heterostructures offers a
freedom of bandstructure engineering that is impossible in standard planar epitaxy …

Topological band evolution between Lieb and kagome lattices

W Jiang, M Kang, H Huang, H Xu, T Low, F Liu - Physical Review B, 2019 - APS
Among two-dimensional lattices, both kagome and Lieb lattices have been extensively
studied, showing unique physics related to their exotic flat and Dirac bands. Interestingly, we …