Amorphous oxide semiconductors (AOSs) have been commercialized since 2012 as thin‐
film transistor (TFT) backplanes in flat‐panel displays. This review first provides a brief …

ZnO is a material which is of great interest for a variety of applications due to its unique
properties and the availability of a variety of growth methods resulting in a number of …

Band engineering using the van der Waals heterostructure of two-dimensional materials
allows for the realization of high-performance optoelectronic devices by providing an …

Graphene, one of the most promising two-dimensional materials, has great potential in
various applications, including nanoelectronics, optoelectronics, energy harvesting, and …

Phototransistors based on monolayer transition metal dichalcogenides (TMD) have high
photosensitivity due to their direct band gap transition. However, there is a lack of …

In recent years, there has been increasing interest in ZnO nanostructures due to their variety
of morphologies and availability of simple and low cost processing. While there are still …

The photocatalytic efficiency of semiconducting catalytic material is greatly influenced by
one of the important factor like band gap. In the area of sustainable energy and …

In this Letter, we present a new class of near-infrared photodetectors comprising Au
nanorods–ZnO nanowire hybrid systems. Fabricated hybrid FET devices showed a large …

In a previous work, we examined subgap states in highly doped amorphous In-Ga-Zn-O (a-
IGZO) films by hard x-ray photoelectron spectroscopy (HX-PES) and found they had subgap …

In the present paper, ZnO nanoparticles (NPs) with particle size of 20–50 nm have been
synthesized by hydrothermal method. UV-visible absorption spectra of ZnO nanoparticles …