A review on performance evaluation of different low power SRAM cells in nano-scale era

H Kumar, VK Tomar - Wireless Personal Communications, 2021 - Springer
The growing demand of Internet of things based portable gadgets motivate to develop low
power static random access memory (SRAM) cell. It occupies large portion in modern …

[HTML][HTML] SRAM cell design challenges in modern deep sub-micron technologies: An overview

W Gul, M Shams, D Al-Khalili - Micromachines, 2022 - mdpi.com
Microprocessors use static random-access memory (SRAM) cells in the cache memory
design. As a part of the central computing component, their performance is critical. Modern …

Leveraging negative capacitance CNTFETs for image processing: An ultra-efficient ternary image edge detection hardware

F Behbahani, MKQ Jooq, MH Moaiyeri… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Recently, integrating ferroelectric materials with nanotransistors such as carbon nanotube
field-effect transistors (CNTFETs) has opened new doors for demonstrating a new …

Read improved and low leakage power CNTFET based hybrid 10t SRAM cell for low power applications

M Elangovan, K Sharma, A Sachdeva… - Circuits, Systems, and …, 2024 - Springer
Static random access memory (SRAM) cell design has undergone extensive development to
achieve good performance and low power consumption. This paper introduces an SRAM …

Energy-efficient single-ended read/write 10t near-threshold sram

E Abbasian, S Sofimowloodi - IEEE Transactions on Circuits …, 2023 - ieeexplore.ieee.org
Modern system-on-chip-based applications require low-power/energy SRAMs for long-term
operation. To deal with this issue, near-threshold SRAM design is an effective approach. In …

A single-bitline 9T SRAM for low-power near-threshold operation in FinFET technology

E Abbasian, M Gholipour, S Birla - Arabian Journal for Science and …, 2022 - Springer
Static random-access memories (SRAMs), which are the most ubiquitous in modern system-
on-chips, suffer from high power dissipation and poor stability in advanced complementary …

Single bit‐line 11T SRAM cell for low power and improved stability

R Lorenzo, R Pailly - IET Computers & Digital Techniques, 2020 - Wiley Online Library
This study aims for a new 11T static random access memory (SRAM) cell that uses power
gating transistors and transmission gate for low leakage and reliable write operation. The …

A highly stable reliable SRAM cell design for low power applications

S Pal, S Bose, WH Ki, A Islam - Microelectronics Reliability, 2020 - Elsevier
The growth in demand for power-efficient neural network accelerators has generated an
intense demand for low power static random access memory (SRAM). In this context, a …

A 32 nm single-ended single-port 7T static random access memory for low power utilization

B Rawat, P Mittal - Semiconductor Science and Technology, 2021 - iopscience.iop.org
In this paper, a seven-transistor static random access memory (SRAM) bit cell with a single
bitline architecture is proposed. This cell is designed at 32 nm and is operational at 300 mV …

Design of a highly stable and robust 10T SRAM cell for low-power portable applications

E Abbasian, M Gholipour - Circuits, Systems, and Signal Processing, 2022 - Springer
This paper investigates a novel highly stable and robust single-ended 10T SRAM cell
appropriate for low-power portable applications. The cell core of the proposed design is a …