Review of highly mismatched III-V heteroepitaxy growth on (001) silicon
Y Du, B Xu, G Wang, Y Miao, B Li, Z Kong, Y Dong… - Nanomaterials, 2022 - mdpi.com
Si-based group III-V material enables a multitude of applications and functionalities of the
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …
GaAs epitaxy on Si substrates: modern status of research and engineering
YB Bolkhovityanov, OP Pchelyakov - Physics-Uspekhi, 2008 - iopscience.iop.org
While silicon and gallium arsenide are dominant materials in modern micro-and
nanoelectronics, devices fabricated from them still use Si and GaAs substrates only …
nanoelectronics, devices fabricated from them still use Si and GaAs substrates only …
Gallium arsenide and other compound semiconductors on silicon
The physics of the growth mechanisms, characterization of epitaxial structures and device
properties of GaAs and other compound semiconductors on Si are reviewed in this paper …
properties of GaAs and other compound semiconductors on Si are reviewed in this paper …
A pathway to thin GaAs virtual substrate on on‐axis Si (001) with ultralow threading dislocation density
With recent developments in high‐speed and high‐power electronics and Si‐based
photonic integration, the concept of monolithic III–V/Si integration through epitaxial methods …
photonic integration, the concept of monolithic III–V/Si integration through epitaxial methods …
[HTML][HTML] Low threading dislocation density GaAs growth on on-axis GaP/Si (001)
We report a systematic study of high quality GaAs growths on on-axis (001) GaP/Si
substrates using molecular beam epitaxy. Various types of dislocation filter layers and …
substrates using molecular beam epitaxy. Various types of dislocation filter layers and …
Self-annihilation of antiphase boundary in GaAs on Si (100) grown by molecular beam epitaxy
M Kawabe, T Ueda - Japanese journal of applied physics, 1987 - iopscience.iop.org
Self-Annihilation of Antiphase Boundary in GaAs on Si(100) Grown by Molecular Beam
Epitaxy - IOPscience This site uses cookies. By continuing to use this site you agree to our use …
Epitaxy - IOPscience This site uses cookies. By continuing to use this site you agree to our use …
Electronic and transport properties of GaAs/InSe van der Waals heterostructure
YH Xu, ZQ Fan, ZH Zhang, T Zhao - Applied Surface Science, 2021 - Elsevier
Abstract Recently, the GaAs/InSe heterostructure was synthesized experimentally, and the
spatial redistribution of charge and motion of energy-resolved photoelectron was imaged. To …
spatial redistribution of charge and motion of energy-resolved photoelectron was imaged. To …
[ΒΙΒΛΙΟ][B] The MOCVD Challenge: A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications
M Razeghi - 2010 - taylorfrancis.com
Now in its second edition, this updated, combined volume provides a survey of GaInAsP-InP
and GaInAsP-GaAs related materials for electronic and photonic device applications. It …
and GaInAsP-GaAs related materials for electronic and photonic device applications. It …
Enhanced photoluminescence of 1.3 μm InAs quantum dots grown on ultrathin GaAs Buffer/Si templates by suppressing interfacial defect emission
We report on the photoluminescence enhancement of 1.3 μm InAs quantum dots (QDs)
epitaxially grown on an ultrathin 250 nm GaAs buffer on a Si substrate. Decreasing the GaAs …
epitaxially grown on an ultrathin 250 nm GaAs buffer on a Si substrate. Decreasing the GaAs …
Growth of high quality GaAs layers on Si substrates by MOCVD
M Akiyama, Y Kawarada, T Ueda, S Nishi… - Journal of Crystal …, 1986 - Elsevier
High quality GaAs layers were grown on Si (100) wafers by heat treatment of the substrates
at high temperatures and a subsequent two-step growth sequence at low temperature and …
at high temperatures and a subsequent two-step growth sequence at low temperature and …