Nonvolatile voltage controlled molecular spin-state switching for memory applications

TK Ekanayaka, G Hao, A Mosey, AS Dale, X Jiang… - Magnetochemistry, 2021 - mdpi.com
Nonvolatile, molecular multiferroic devices have now been demonstrated, but it is worth
giving some consideration to the issue of whether such devices could be a competitive …

Sub-Nanosecond Switching of Si:HfO2 Ferroelectric Field-Effect Transistor

MM Dahan, H Mulaosmanovic, O Levit, S Dünkel… - Nano Letters, 2023 - ACS Publications
The discovery of ferroelectric doped HfO2 enabled the emergence of scalable and CMOS-
compatible ferroelectric field-effect transistor (FeFET) technology which has the potential to …

FinFET 6T-SRAM All-Digital Compute-in-Memory for Artificial Intelligence Applications: An Overview and Analysis

W Gul, M Shams, D Al-Khalili - Micromachines, 2023 - mdpi.com
Artificial intelligence (AI) has revolutionized present-day life through automation and
independent decision-making capabilities. For AI hardware implementations, the 6T-SRAM …

Computing in memory with FeFETs

D Reis, M Niemier, XS Hu - … of the international symposium on low power …, 2018 - dl.acm.org
Data transfer between a processor and memory frequently represents a bottleneck with
respect to improving application-level performance. Computing in memory (CiM), where …

Ferroelectric FETs-based nonvolatile logic-in-memory circuits

X Yin, X Chen, M Niemier, XS Hu - IEEE Transactions on Very …, 2018 - ieeexplore.ieee.org
Among the beyond-complementary metal-oxide-semiconductor (CMOS) devices being
explored, ferroelectric field-effect transistors (FeFETs) are considered as one of the most …

Device-circuit analysis of ferroelectric FETs for low-power logic

S Gupta, M Steiner, A Aziz, V Narayanan… - … on Electron Devices, 2017 - ieeexplore.ieee.org
Ferroelectric FETs (FEFETs) are emerging devices with an immense potential to replace
conventional MOSFETs by virtue of their steep switching characteristics. The ferroelectric …

Perspective on ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing

ET Breyer, H Mulaosmanovic, T Mikolajick… - Applied Physics …, 2021 - pubs.aip.org
Ferroelectric hafnium oxide (HfO 2) has been extensively studied for over a decade,
especially as a CMOS-compatible material in emerging memory applications. Most recently …

Insights into the operation of negative capacitance FinFET for low power logic applications

RK Jaisawal, PN Kondekar, S Yadav, P Upadhyay… - Microelectronics …, 2022 - Elsevier
In the incessant search to overcome the power densities and energy efficient limitations,
performance matrix of emerging electronic devices are being explored inevitably to find the …

Computing with ferroelectric FETs: Devices, models, systems, and applications

A Aziz, ET Breyer, A Chen, X Chen… - … , Automation & Test …, 2018 - ieeexplore.ieee.org
In this paper, we consider devices, circuits, and systems comprised of transistors with
integrated ferroelectrics. Said structures are actively being considered by various …

Design and analysis of an ultra-dense, low-leakage, and fast FeFET-based random access memory array

D Reis, K Ni, W Chakraborty, X Yin… - IEEE Journal on …, 2019 - ieeexplore.ieee.org
High static power associated with static random access memory (SRAM) represents a
bottleneck in increasing the amount of on-chip memory. Novel, emerging nonvolatile …