Wide bandgap (WBG) semiconductors are becoming more widely accepted for use in power
electronics due to their superior electrical energy efficiencies and improved power densities …

Wide bandgap semiconductors promise devices with performances not achievable using
silicon technology. Among them, silicon carbide (SiC) is considered the top-notch material …

Wide band gap (WGB) materials are the most promising semiconductors for future electronic
devices, and are candidates to replace the conventional materials (Si, GaAs,…) that are …

Emerging wide bandgap semiconductor devices such as the ones built with SiC have the
potential to revolutionize the power electronics industry through faster switching speeds …

In this paper, we demonstrate the feasibility of fabricating vertical Schottky diodes on bulk
cubic silicon carbide (3C-SiC) material obtained by combining sublimation epitaxy and …

We have discussed the thermal sensing capability under a constant current level and current
versus voltage (I–V) traces by measuring the temperature of high series resistance Pt/n …

We introduce a 3C-SiC growth concept on off-oriented 4H-SiC substrates using a
sublimation epitaxial method. A growth model of 3C-SiC layer development via a controlled …

In this paper, we demonstrate the high electrical activity of extended defects found in 3C–
SiC heteroepitaxially grown layer on (100) silicon substrates. Cross-sectional scanning …

We have investigated whether the Schottky barrier diodes (SBD) parameters such as the SB
height and ideality factor (IF) change as a function of Schottky contact (SC) area, in the Pt/n …

3C-SiC epitaxially grown on Si displays a large wealth of extended defects. In particular,
single, double and triple stacking faults (SFs) are observed to coexist in several …