Manifestation on the choice of a suitable combination of MIS for proficient Schottky diodes for optoelectronics applications: A comprehensive review

GA Sibu, P Gayathri, T Akila, R Marnadu… - Nano Energy, 2024 - Elsevier
In this review, we explore the last fifty years of Metal-Insulator-Semiconductor (MIS) Schottky
barrier diode research, highlighting a surge in interest in tailored filaments for thin films …

On current-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

A TURUT - Turkish Journal of Physics, 2020 - journals.tubitak.gov.tr
It is expected the fact that the current following across metal-semiconductor (MS) rectifying
contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their …

Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices

A Kahraman, SC Deevi, E Yilmaz - Journal of materials science, 2020 - Springer
The unique physical, chemical, and electronic properties of rare earth oxides have been of
immense interest to replace SiO 2 as a dielectric material in metal–oxide–semiconductor …

The capacitance/conductance and surface state intensity characteristics of the Schottky structures with ruthenium dioxide-doped organic polymer interface

M Ulusoy, Y Badali, G Pirgholi-Givi… - Synthetic Metals, 2023 - Elsevier
The electrical behaviors of the Schottky structures with a ruthenium dioxide (RuO 2) doped-
polyvinyl chloride (PVC) interface were executed with a wide frequency range (from 1 kHz to …

Investigation of the interface state characteristics of the Al/Al2O3/Ge/p-Si heterostructure over a wide frequency range by capacitance and conductance measurements

B Akın, M Ulusoy, SA Yerişkin - Materials Science in Semiconductor …, 2024 - Elsevier
Abstract In this work, Al/Al 2 O 3/Ge/p-Si heterostructures were fabricated by e-beam thermal
evaporation. The EDX (energy dispersive X-ray spectroscopy) map visually obtained the …

Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of …

Ş Altındal, AF Özdemir, Ş Aydoğan, A Türüt - Journal of Materials Science …, 2022 - Springer
Au/n-GaAs device was fabricated with an organic PNoMPhPPy thin polymer interfacial layer
whose bandgap (E g) was found as 2.95 eV from the (αhν) 2–hν plot. The PNoMPhPPy poly …

Solar light responsive ZnO nanoparticles adjusted using Cd and La Co-dopant photodetector

BA Gozeh, A Karabulut, A Yildiz… - Journal of Alloys and …, 2018 - Elsevier
Optical sensing from the solar light range of light is very important for industrial process
monitoring and life science. Hence, we present inorganic photodetector, operating between …

Significant enhancement in photosensitivity, responsivity, detectivity and quantum efficiency of Co3O4 nanostructured thin film-based photodetectors through Mo …

R Marnadu, M Shkir, J Hakami, IM Ashraf… - Surfaces and …, 2022 - Elsevier
Herein, we have developed the high-performance photodetector diodes (p-Co 3 O4/n-Si and
p-Mo@ Co 3 O 4/n-Si) by spray pyrolysis route for modern optoelectronic devices. The …

Zn-doped CdO effects on the optical, electrical and photoresponse properties of heterojunctions-based photodiodes

BA Gozeh, A Karabulut, CB Ismael, SI Saleh… - Journal of Alloys and …, 2021 - Elsevier
ZnO nanostructures have attracted great attention from researchers due to their interesting
properties that include better crystallinity, high surface-area, improved electrical and optical …

Morpho-structural and optoelectronic properties of diamond like carbon–germanium (DLC-Ge) composite thin films produced by magnetron sputtering

N Aslan, MŞ Kurt, MM Koç - Optical Materials, 2022 - Elsevier
Diamond-like carbon films have found various areas of application due to their particularly
durable characteristics. To enhance the electrical and optoelectronic characteristics of the …