Recent advances of photodetection technology based on main group III–V semiconductors
J Ai, M Qin, M Xue, C Cao, J Zhang… - Advanced Functional …, 2024 - Wiley Online Library
The rapid advancement of main group III–V nanomaterials endows photodetectors (PDs)
with enhanced performance. At present, various III–V nanomaterials are systematically …
with enhanced performance. At present, various III–V nanomaterials are systematically …
Semiconductor nanowhiskers: synthesis, properties, and applications
Recent results of studying the semiconductor's whisker nanocrystals are reviewed. Physical
grounds of growing whisker nanocrystals using the mechanism vapor-liquid-crystal are …
grounds of growing whisker nanocrystals using the mechanism vapor-liquid-crystal are …
[BUCH][B] Nucleation theory and growth of nanostructures
VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
Vertically Aligned WO3 Nanowire Arrays Grown Directly on Transparent Conducting Oxide Coated Glass: Synthesis and Photoelectrochemical Properties
Photocorrosion stable WO3 nanowire arrays are synthesized by a solvothermal technique
on fluorine-doped tin oxide coated glass. WO3 morphologies of hexagonal and monoclinic …
on fluorine-doped tin oxide coated glass. WO3 morphologies of hexagonal and monoclinic …
Inhibition, enhancement, and control of spontaneous emission in photonic nanowires
We experimentally investigate the spontaneous emission (SE) rates of single InAs quantum
dots embedded in GaAs photonic nanowires. For a diameter leading to the optimal …
dots embedded in GaAs photonic nanowires. For a diameter leading to the optimal …
Crystal phase quantum dots
In semiconducting nanowires, both zinc blende and wurtzite1 crystal structures can coexist.
2− 4 The band structure difference between the two structures can lead to charge …
2− 4 The band structure difference between the two structures can lead to charge …
Controlling the abruptness of axial heterojunctions in III–V nanowires: beyond the reservoir effect
Heterostructure nanowires have many potential applications due to the avoidance of
interface defects by lateral strain relaxation. However, most heterostructure semiconductor …
interface defects by lateral strain relaxation. However, most heterostructure semiconductor …
InxGa1-xAs Nanowires on Silicon: One-Dimensional Heterogeneous Epitaxy, Bandgap Engineering, and Photovoltaics
We report on the one-dimensional (1D) heteroepitaxial growth of In x Ga1-x As (x= 0.2–1)
nanowires (NWs) on silicon (Si) substrates over almost the entire composition range using …
nanowires (NWs) on silicon (Si) substrates over almost the entire composition range using …
Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis
The Au-assisted molecular beam epitaxial growth of InAs nanowires is discussed. In situ
reflection high-energy electron diffraction observations of phase transitions of the catalyst …
reflection high-energy electron diffraction observations of phase transitions of the catalyst …
Recent advances in semiconductor nanowire heterostructures
Semiconductor nanowires have made a deep impact on materials science related research,
and are being explored for applications in several disciplines. Many of these applications …
and are being explored for applications in several disciplines. Many of these applications …