Recent advances of photodetection technology based on main group III–V semiconductors

J Ai, M Qin, M Xue, C Cao, J Zhang… - Advanced Functional …, 2024 - Wiley Online Library
The rapid advancement of main group III–V nanomaterials endows photodetectors (PDs)
with enhanced performance. At present, various III–V nanomaterials are systematically …

Semiconductor nanowhiskers: synthesis, properties, and applications

VG Dubrovskii, GE Cirlin, VM Ustinov - Semiconductors, 2009 - Springer
Recent results of studying the semiconductor's whisker nanocrystals are reviewed. Physical
grounds of growing whisker nanocrystals using the mechanism vapor-liquid-crystal are …

[BUCH][B] Nucleation theory and growth of nanostructures

VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …

Vertically Aligned WO3 Nanowire Arrays Grown Directly on Transparent Conducting Oxide Coated Glass: Synthesis and Photoelectrochemical Properties

J Su, X Feng, JD Sloppy, L Guo, CA Grimes - Nano letters, 2011 - ACS Publications
Photocorrosion stable WO3 nanowire arrays are synthesized by a solvothermal technique
on fluorine-doped tin oxide coated glass. WO3 morphologies of hexagonal and monoclinic …

Inhibition, enhancement, and control of spontaneous emission in photonic nanowires

J Bleuse, J Claudon, M Creasey, NS Malik, JM Gérard… - Physical review …, 2011 - APS
We experimentally investigate the spontaneous emission (SE) rates of single InAs quantum
dots embedded in GaAs photonic nanowires. For a diameter leading to the optimal …

Crystal phase quantum dots

N Akopian, G Patriarche, L Liu, JC Harmand… - Nano …, 2010 - ACS Publications
In semiconducting nanowires, both zinc blende and wurtzite1 crystal structures can coexist.
2− 4 The band structure difference between the two structures can lead to charge …

Controlling the abruptness of axial heterojunctions in III–V nanowires: beyond the reservoir effect

KA Dick, J Bolinsson, BM Borg, J Johansson - Nano letters, 2012 - ACS Publications
Heterostructure nanowires have many potential applications due to the avoidance of
interface defects by lateral strain relaxation. However, most heterostructure semiconductor …

InxGa1-xAs Nanowires on Silicon: One-Dimensional Heterogeneous Epitaxy, Bandgap Engineering, and Photovoltaics

JC Shin, KH Kim, KJ Yu, H Hu, L Yin, CZ Ning… - Nano …, 2011 - ACS Publications
We report on the one-dimensional (1D) heteroepitaxial growth of In x Ga1-x As (x= 0.2–1)
nanowires (NWs) on silicon (Si) substrates over almost the entire composition range using …

Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis

M Tchernycheva, L Travers, G Patriarche… - Journal of Applied …, 2007 - pubs.aip.org
The Au-assisted molecular beam epitaxial growth of InAs nanowires is discussed. In situ
reflection high-energy electron diffraction observations of phase transitions of the catalyst …

Recent advances in semiconductor nanowire heterostructures

J Johansson, KA Dick - CrystEngComm, 2011 - pubs.rsc.org
Semiconductor nanowires have made a deep impact on materials science related research,
and are being explored for applications in several disciplines. Many of these applications …