A comprehensive review on emerging artificial neuromorphic devices

J Zhu, T Zhang, Y Yang, R Huang - Applied Physics Reviews, 2020 - pubs.aip.org
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Standards for the characterization of endurance in resistive switching devices

M Lanza, R Waser, D Ielmini, JJ Yang, L Goux… - ACS …, 2021 - ACS Publications
Resistive switching (RS) devices are emerging electronic components that could have
applications in multiple types of integrated circuits, including electronic memories, true …

Hybrid 2D–CMOS microchips for memristive applications

K Zhu, S Pazos, F Aguirre, Y Shen, Y Yuan, W Zheng… - Nature, 2023 - nature.com
Exploiting the excellent electronic properties of two-dimensional (2D) materials to fabricate
advanced electronic circuits is a major goal for the semiconductor industry,. However, most …

The future of memristors: Materials engineering and neural networks

K Sun, J Chen, X Yan - Advanced Functional Materials, 2021 - Wiley Online Library
Abstract From Deep Blue to AlphaGo, artificial intelligence and machine learning are
booming, and neural networks have become the hot research direction. However, due to the …

Memristive crossbar arrays for brain-inspired computing

Q **a, JJ Yang - Nature materials, 2019 - nature.com
With their working mechanisms based on ion migration, the switching dynamics and
electrical behaviour of memristive devices resemble those of synapses and neurons, making …

Recommended methods to study resistive switching devices

M Lanza, HSP Wong, E Pop, D Ielmini… - Advanced Electronic …, 2019 - Wiley Online Library
Resistive switching (RS) is an interesting property shown by some materials systems that,
especially during the last decade, has gained a lot of interest for the fabrication of electronic …

[HTML][HTML] Brain-inspired computing with memristors: Challenges in devices, circuits, and systems

Y Zhang, Z Wang, J Zhu, Y Yang, M Rao… - Applied Physics …, 2020 - pubs.aip.org
This article provides a review of current development and challenges in brain-inspired
computing with memristors. We review the mechanisms of various memristive devices that …

Nanoionic memristive phenomena in metal oxides: the valence change mechanism

R Dittmann, S Menzel, R Waser - Advances in Physics, 2021 - Taylor & Francis
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Organic memory and memristors: from mechanisms, materials to devices

L Yuan, S Liu, W Chen, F Fan… - Advanced Electronic …, 2021 - Wiley Online Library
Facing the exponential growth of data digital communications and the advent of artificial
intelligence, there is an urgent need for information technologies with huge storage capacity …

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

D Ielmini - Semiconductor Science and Technology, 2016 - iopscience.iop.org
With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and
scalable memory technologies are being researched for data storage and data-driven …