Epitaxial growth and band alignment properties of NiO/GaN heterojunction for light emitting diode applications
Epitaxial NiO layers have been grown on GaN templates with the out-of-plane and in-plane
epitaxial relationship of [111] NiO ǁ [0001] GaN and [-110] NiO ǁ [-12-10] GaN, respectively …
epitaxial relationship of [111] NiO ǁ [0001] GaN and [-110] NiO ǁ [-12-10] GaN, respectively …
Structural, electronic structure, and band alignment properties at epitaxial NiO/Al2O3 heterojunction evaluated from synchrotron based X-ray techniques
The valence band offset value of 2.3±0.2 eV at epitaxial NiO/Al 2 O 3 heterojunction is
determined from photoelectron spectroscopy experiments. Pulsed laser deposited thin film …
determined from photoelectron spectroscopy experiments. Pulsed laser deposited thin film …
[HTML][HTML] High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
We report on the growth of high-quality GaAs semiconductor materials on an AlAs/sapphire
substrate by molecular beam epitaxy. The growth of GaAs on sapphire centers on a new …
substrate by molecular beam epitaxy. The growth of GaAs on sapphire centers on a new …
Interface band alignment engineering of ZnO/Si heterojunction solar cells with high open circuit voltage
P Mondal - Journal of Materials Science: Materials in Electronics, 2024 - Springer
This study investigates the impact of calcination temperature on Zinc Oxide (ZnO) films
deposited on quartz substrates, focusing on their structural, optical, and electronic …
deposited on quartz substrates, focusing on their structural, optical, and electronic …
Determination of band offsets at strained NiO and MgO heterojunction for MgO as an interlayer in heterojunction light emitting diode applications
Valence band offset of 2.3±0.4 eV at strained NiO/MgO heterojunction is determined from
photoelectron spectroscopy (PES) measurements. The determined value of valence band …
photoelectron spectroscopy (PES) measurements. The determined value of valence band …
Investigation of crystalline and band alignment properties of NiO/GaN and Ni0. 5Co0. 5O/GaN heterojunctions using synchrotron radiation based techniques
Epitaxial layers of NiO and Ni 0.5 Co 0.5 O have been deposited on GaN templates using
RF magnetron sputtering deposition technique. The epitaxial relationship in out-of-plane …
RF magnetron sputtering deposition technique. The epitaxial relationship in out-of-plane …
Qualitative Analysis of the Valence and Conduction Band Offset Parameters in FeNiO/CuNiO Bilayer Film Using X‐Ray Photoelectron Spectroscopy
The valence and conduction band offset in FeNiO/CuNiO bilayer film are studied utilizing X‐
ray photoelectron spectroscopy and UV–vis spectroscopy. The bilayer film is grown on Si …
ray photoelectron spectroscopy and UV–vis spectroscopy. The bilayer film is grown on Si …
Effect of surface morphology on the optical properties of InAs/Ge (1 1 1)
In the present work, the effect of surface morphology of nanotextured InAs/Ge (1 1 1)
epilayers on their optical properties is presented. Spectroscopic ellipsometry measurement …
epilayers on their optical properties is presented. Spectroscopic ellipsometry measurement …
Study of the microstructure information of GaAs epilayers grown on silicon substrate using synchrotron radiation
Williamson–Hall (WH) analysis is a well established method for studying the microstructural
properties of epilayers grown on foreign substrates. However, the method becomes …
properties of epilayers grown on foreign substrates. However, the method becomes …
Development of III-V and IV Epitaxy on Sapphire Technology
E Wangila - 2024 - search.proquest.com
This research presents comprehensive insights into the epitaxial growth of germanium (Ge)
on c-plane sapphire substrates using molecular beam epitaxy (MBE). The direct growth of …
on c-plane sapphire substrates using molecular beam epitaxy (MBE). The direct growth of …