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Defect identification in semiconductors with positron annihilation:<? format?> Experiment and theory
Positron annihilation spectroscopy is particularly suitable for studying vacancy-type
defects<? format?> in semiconductors. Combining state-of-the-art experimental and …
defects<? format?> in semiconductors. Combining state-of-the-art experimental and …
First-principles theory of dilute magnetic semiconductors
K Sato, L Bergqvist, J Kudrnovský, PH Dederichs… - Reviews of modern …, 2010 - APS
This review summarizes recent first-principles investigations of the electronic structure and
magnetism of dilute magnetic semiconductors (DMSs), which are interesting for applications …
magnetism of dilute magnetic semiconductors (DMSs), which are interesting for applications …
Intrinsic hole localization mechanism in magnetic semiconductors
H Raebiger, A Ayuela… - Journal of Physics …, 2004 - iopscience.iop.org
The interplay between clustering and exchange coupling in magnetic semiconductors for the
prototype (Ga 1− x, Mn x) As is investigated considering manganese concentrations x of …
prototype (Ga 1− x, Mn x) As is investigated considering manganese concentrations x of …
High Curie temperatures at low compensation in the ferromagnetic semiconductor (Ga, Mn) As
We investigate the relationship between the Curie temperature TC and the carrier density p
in the ferromagnetic semiconductor (Ga, Mn) As. Carrier densities are extracted from …
in the ferromagnetic semiconductor (Ga, Mn) As. Carrier densities are extracted from …
Compensation, interstitial defects, and ferromagnetism in diluted ferromagnetic semiconductors
G Bouzerar, T Ziman, J Kudrnovský - Physical Review B—Condensed Matter …, 2005 - APS
We present a quantitative theory for ferromagnetism in diluted III-V ferromagnetic
semiconductors in the presence of the two types of defects commonly supposed to be …
semiconductors in the presence of the two types of defects commonly supposed to be …
Postgrowth annealing of (Ga, Mn) As under As cap**: An alternative way to increase TC
M Adell, L Ilver, J Kanski, V Stanciu… - Applied Physics …, 2005 - pubs.aip.org
In situ postgrowth annealing of (Ga, Mn) As layers under As cap** is adequate for
achieving high Curie temperatures (TC) in a similar way as ex situ annealing in air or in N 2 …
achieving high Curie temperatures (TC) in a similar way as ex situ annealing in air or in N 2 …
All-wurtzite (In, Ga) As-(Ga, Mn) As core–shell nanowires grown by molecular beam epitaxy
Structural and magnetic properties of (In, Ga) As-(Ga, Mn) As core–shell nanowires grown
by molecular beam epitaxy on GaAs (111) B substrate with gold catalyst have been …
by molecular beam epitaxy on GaAs (111) B substrate with gold catalyst have been …
Electronic and magnetic properties of substitutional Mn clusters in (Ga, Mn) As
H Raebiger, A Ayuela, J Von Boehm - Physical Review B—Condensed Matter …, 2005 - APS
The magnetization and hole distribution of Mn clusters in (Ga, Mn) As are investigated by all-
electron total energy calculations using the projector augmented wave method within the …
electron total energy calculations using the projector augmented wave method within the …
Probing biomembranes with positrons
P Sane, E Salonen, E Falck, J Repakova… - The Journal of …, 2009 - ACS Publications
Free volume pockets inside a cell membrane play a prominent role in a variety of dynamic
processes such as the permeability of small molecules across membranes and the diffusion …
processes such as the permeability of small molecules across membranes and the diffusion …
Diffusion and clustering of substitutional Mn in (Ga, Mn) As
The Ga vacancy mediated microstructure evolution of (Ga, Mn) As during growth and
postgrowth annealing is studied using a multiscale approach. The migration barriers for the …
postgrowth annealing is studied using a multiscale approach. The migration barriers for the …