Quantitative optical assessment of photonic and electronic properties in halide perovskite

A Bercegol, D Ory, D Suchet, S Cacovich… - Nature …, 2019 - nature.com
The development of high efficiency solar cells relies on the management of electronic and
optical properties that need to be accurately measured. As the conversion efficiencies …

Determination of transport properties in optoelectronic devices by time-resolved fluorescence imaging

A Bercegol, G El-Hajje, D Ory, L Lombez - Journal of Applied Physics, 2017 - pubs.aip.org
In this article, we introduce time-resolved fluorescence imaging as an optical
characterization method for optoelectronic devices. Under wide-field illumination, it allows …

Macroscopic transverse drift of long current-induced spin coherence in two-dimensional electron gases

FGG Hernandez, S Ullah, GJ Ferreira, NM Kawahala… - Physical Review B, 2016 - APS
We imaged the transport of current-induced spin coherence in a two-dimensional electron
gas confined in a triple quantum well. Nonlocal Kerr rotation measurements, based on the …

[PDF][PDF] Optical control and detection of spin coherence in multilayer systems.

S Ullah - 2017 - researchgate.net
Since a decade, spintronics and related physics have attracted considerable attention due to
the massive research conducted in these areas. The main reason for growing interest in …

Optical imaging of light-induced thermopower in semiconductors

F Gibelli, L Lombez, J Rodière, JF Guillemoles - Physical Review Applied, 2016 - APS
The traditional measurement of the thermoelectric Seebeck coefficient gives a global value
for a given material. This method requires heating and electrical contacts. Here, we report a …

Spin and recombination dynamics of excitons and free electrons in p-type GaAs: Effect of carrier density

F Cadiz, D Lagarde, P Renucci, D Paget… - Applied Physics …, 2017 - pubs.aip.org
Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration
NA= 1.5× 10 17 cm− 3 using time-resolved photoluminescence spectroscopy at 15 K. At low …

Ambipolar spin-spin coupling in -GaAs

F Cadiz, D Paget, ACH Rowe, S Arscott - Physical Review B, 2015 - APS
A spin-spin coupling mechanism that occurs during the transport of spin-polarized minority
electrons in semiconductors is described. Unlike the Coulomb spin drag, this coupling arises …

Charge and spin transport over record distances in GaAs metallic -type nanowires

H Hijazi, D Paget, G Monier, G Grégoire, J Leymarie… - Physical Review B, 2021 - APS
We have investigated charge and spin transport in n-type metallic GaAs nanowires (≈ 10 17
cm− 3 do** level) grown by hydride vapor phase epitaxy (HVPE) on Si substrates. For this …

[HTML][HTML] Ambipolar spin diffusion in p-type GaAs: A case where spin diffuses more than charge

F Cadiz, V Notot, J Filipovic, D Paget… - Journal of Applied …, 2017 - pubs.aip.org
We investigate the diffusion of charge and spin at 15 K in p-type GaAs, combining transient-
grating and energy-resolved microluminescence measurements to cover a broad range of …

Quasi-nondegenerate pump–probe magnetooptical experiment in GaAs/AlGaAs heterostructure based on spectral filtration

M Surýnek, L Nádvorník… - New Journal of …, 2020 - iopscience.iop.org
We report on a quasi-nondegenerate pump–probe technique that is based on spectral-
filtration of femtosecond laser pulses by a pair of mutually-spectrally-disjunctive …