Preferential interface nucleation: an expansion of the VLS growth mechanism for nanowires
A review and expansion of the fundamental processes of the vapor–liquid–solid (VLS)
growth mechanism for nanowires is presented. Although the focus is on nanowires, most of …
growth mechanism for nanowires is presented. Although the focus is on nanowires, most of …
A review of nanowire growth promoted by alloys and non-alloying elements with emphasis on Au-assisted III–V nanowires
KA Dick - Progress in Crystal Growth and Characterization of …, 2008 - Elsevier
Seed particles of elements or compounds which may or may not form alloys are now used
extensively in promoting well-controlled nanowire growth. The technology has evolved …
extensively in promoting well-controlled nanowire growth. The technology has evolved …
[BUCH][B] Nucleation theory and growth of nanostructures
VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
Ultrahigh strength single crystalline nanowhiskers grown by physical vapor deposition
The strength of metal crystals is reduced below the theoretical value by the presence of
dislocations or by flaws that allow easy nucleation of dislocations. A straightforward method …
dislocations or by flaws that allow easy nucleation of dislocations. A straightforward method …
Epitaxial III− V nanowires on silicon
T Mårtensson, CPT Svensson, BA Wacaser… - Nano …, 2004 - ACS Publications
We present results of ideal epitaxial nucleation and growth of III− V semiconductor
nanowires on silicon substrates. This addresses the long-time challenge of integrating high …
nanowires on silicon substrates. This addresses the long-time challenge of integrating high …
Synthesis of branched'nanotrees' by controlled seeding of multiple branching events
The formation of nanostructures with controlled size and morphology has been the focus of
intensive research in recent years,,,,,,,,,. Such nanostructures are important in the …
intensive research in recent years,,,,,,,,,. Such nanostructures are important in the …
Nanowire arrays defined by nanoimprint lithography
We demonstrate the use of nanoimprint lithography to define arrays of vertical InP
nanowires. Each nanowire is individually seeded from a catalyzing gold particle and then …
nanowires. Each nanowire is individually seeded from a catalyzing gold particle and then …
Role of surface diffusion in chemical beam epitaxy of InAs nanowires
We present growth studies of InAs nanowires nucleated from lithographically positioned Au
seeds on InAs (111) B substrates. The nanowires are grown in a chemical beam epitaxy …
seeds on InAs (111) B substrates. The nanowires are grown in a chemical beam epitaxy …
Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process
We demonstrate vertically aligned epitaxial GaAs nanowires of excellent crystallographic
quality and optimal shape, grown by Au nanoparticle-catalyzed metalorganic chemical …
quality and optimal shape, grown by Au nanoparticle-catalyzed metalorganic chemical …
Continuous gas-phase synthesis of nanowires with tunable properties
Semiconductor nanowires are key building blocks for the next generation of light-emitting
diodes, solar cells and batteries. To fabricate functional nanowire-based devices on an …
diodes, solar cells and batteries. To fabricate functional nanowire-based devices on an …