[PDF][PDF] Area, power, and latency considerations of STT-MRAM to substitute for main memory
STT-MRAM is one of the most promising non-volatile memory technologies with the potential
of becoming a universal memory. However, because of its area, power and latency …
of becoming a universal memory. However, because of its area, power and latency …
An accurate model of domain-wall-based spintronic memristor
Spintronic memristors are promising devices that can be used in various applications such
as memory chips and neuromorphic systems. The spintronic memristor combines the non …
as memory chips and neuromorphic systems. The spintronic memristor combines the non …
Spice circuit modeling of pma spin wave bus excited using magnetoelectric effect
We propose a formalism of a compact model for circuit simulations of spin wave
interconnects. The developed SPICE Spin Wave model is based on the theory of numerical …
interconnects. The developed SPICE Spin Wave model is based on the theory of numerical …
[BOOK][B] Voltage-controlled magnetic dynamics in nanoscale magnetic tunnel junctions
JGA Vinasco - 2014 - search.proquest.com
Spintronic devices, ie, those utilizing the interaction of magnetic moments with electric
voltages and currents in magnetic nanostructures, offer an exceptionally promising set of …
voltages and currents in magnetic nanostructures, offer an exceptionally promising set of …
[PDF][PDF] Energy-performance characterization of CMOS/magnetic tunnel junction (MTJ) hybrid logic circuits
F Ren - 2010 - researchgate.net
The explosive growth of the semiconductor industry over the past decade has been driven
by the rapid scaling of complementary metal-oxide-semiconductor (CMOS) technology …
by the rapid scaling of complementary metal-oxide-semiconductor (CMOS) technology …
Temperature aware adaptations for improved read reliability in STT-MRAM memory subsystem
Spin-transfer torque magneto-resistive random-access memory (STT-MRAM) is an exciting
new emerging technology, being considered as a strong candidate to fill the gaps in the …
new emerging technology, being considered as a strong candidate to fill the gaps in the …
Techniques to improve write and retention reliability of STT-MRAM memory subsystem
Spin transfer torque magneto-resistive random-access memory (STT-MRAM) has many
advantages, such as scalability, persistence, practically infinite endurance, and fast access …
advantages, such as scalability, persistence, practically infinite endurance, and fast access …
Modeling of in-plane magnetic tunnel junction for mixed mode simulations
The incredible potentials of spin transfer torque (STT) magnetic random access memories
(MRAMs) give them an edge over other memory technologies. Most of the projections show …
(MRAMs) give them an edge over other memory technologies. Most of the projections show …
Advanced circuit-level model for temperature-sensitive read/write operation of a magnetic tunnel junction
H Lim, S Lee, H Shin - IEEE Transactions on Electron Devices, 2014 - ieeexplore.ieee.org
A circuit-level model of a magnetic tunnel junction (MTJ) that accurately depicts the spin-
transfer torque switching behavior of an MTJ along with its voltage/temperature dependency …
transfer torque switching behavior of an MTJ along with its voltage/temperature dependency …
Comparative analysis of logic gates based on spin transfer torque (STT) and differential spin hall effect (DSHE) switching mechanisms
Conventional complementary metal oxide semiconductor (CMOS) based memory and logic
gates, has a major issue of large static power dissipation below 45-nm technology nodes …
gates, has a major issue of large static power dissipation below 45-nm technology nodes …