Composition and strain in thin Si1− xGex virtual substrates measured by micro-Raman spectroscopy and x-ray diffraction
TS Perova, J Wasyluk, K Lyutovich, E Kasper… - Journal of Applied …, 2011 - pubs.aip.org
Micro-Raman spectroscopy was employed for the determination of the germanium content, x
and strain, ε, in ultrathin SiGe virtual substrates grown directly on Si by molecular beam …
and strain, ε, in ultrathin SiGe virtual substrates grown directly on Si by molecular beam …
Past, present and future: SiGe and CMOS transistor scaling
This paper discusses the historical role that SiGe has played in driving the CMOS scaling
roadmap, including discussion of NMOS biaxial strain and PMOS uniaxial strain. The paper …
roadmap, including discussion of NMOS biaxial strain and PMOS uniaxial strain. The paper …
Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers
M Kurosawa, M Kato, T Yamaha, N Taoka… - Applied Physics …, 2015 - pubs.aip.org
High-Sn-content SiSn alloys are strongly desired for the next-generation near-infrared
optoelectronics. A polycrystalline growth study has been conducted on amorphous SiSn …
optoelectronics. A polycrystalline growth study has been conducted on amorphous SiSn …
Bulk-suppressed and surface-sensitive Raman scattering by transferable plasmonic membranes with irregular slot-shaped nanopores
Raman spectroscopy enables the non-destructive characterization of chemical composition,
crystallinity, defects, or strain in countless materials. However, the Raman response of …
crystallinity, defects, or strain in countless materials. However, the Raman response of …
Lattice deformation at submicron scale: X-ray nanobeam measurements of elastic strain in electron shuttling devices
The lattice strain induced by metallic electrodes can impair the functionality of advanced
quantum devices operating with electron or hole spins. Here, we investigate the deformation …
quantum devices operating with electron or hole spins. Here, we investigate the deformation …
Germanium content and strain in Si1− xGex alloys characterized by Raman spectroscopy
D Rouchon, M Mermoux, F Bertin, JM Hartmann - Journal of crystal growth, 2014 - Elsevier
Previous Raman spectroscopy studies on SiGe alloys have left rather large uncertainties
concerning the relationships between the Raman peaks׳ frequency shifts and stress. In this …
concerning the relationships between the Raman peaks׳ frequency shifts and stress. In this …
Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures.
Defect-free mismatched heterostructures on Si substrates are produced by an innovative
strategy. The strain relaxation is engineered to occur elastically rather than plastically by …
strategy. The strain relaxation is engineered to occur elastically rather than plastically by …
Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method
We study the impact of the SiGe thickness in starting substrates composed of Si/Si 0.25 Ge
0.75/SOI (100) structures for the Ge condensation process on the resulting Ge-on-insulator …
0.75/SOI (100) structures for the Ge condensation process on the resulting Ge-on-insulator …
Comparative structural and optical studies on pellet and powder samples of BaTiO3 near phase transition temperature
In order to investigate the possible effect of inter-granular strain on the physical properties of
Barium titanate (BaTiO 3), comparative studies have been carried out on the polycrystalline …
Barium titanate (BaTiO 3), comparative studies have been carried out on the polycrystalline …
Probing Lattice Dynamics and Electronic Resonances in Hexagonal Ge and SixGe1–x Alloys in Nanowires by Raman Spectroscopy
Recent advances in nanowire synthesis have enabled the realization of crystal phases that
in bulk are attainable only under extreme conditions, ie, high temperature and/or high …
in bulk are attainable only under extreme conditions, ie, high temperature and/or high …