How to report and benchmark emerging field-effect transistors

Z Cheng, CS Pang, P Wang, ST Le, Y Wu… - Nature …, 2022 - nature.com
The use of organic, oxide and low-dimensional materials in field-effect transistors has now
been studied for decades. However, properly reporting and comparing device performance …

Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment

Y Wang, S Liu, Q Li, R Quhe, C Yang… - Reports on Progress …, 2021 - iopscience.iop.org
Over the past decade, two-dimensional semiconductors (2DSCs) have aroused wide
interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal …

High Current Density in Monolayer MoS2 Doped by AlOx

CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi… - ACS …, 2021 - ACS Publications
Semiconductors require stable do** for applications in transistors, optoelectronics, and
thermoelectrics. However, this has been challenging for two-dimensional (2D) materials …

Emerging reconfigurable electronic devices based on two‐dimensional materials: A review

W Fei, J Trommer, MC Lemme, T Mikolajick… - InfoMat, 2022 - Wiley Online Library
As the dimensions of the transistor, the key element of silicon technology, are approaching
their physical limits, develo** semiconductor technology with novel concepts and …

Challenges of wafer‐scale integration of 2D semiconductors for high‐performance transistor circuits

T Schram, S Sutar, I Radu, I Asselberghs - Advanced Materials, 2022 - Wiley Online Library
Abstract Large‐area 2D‐material‐based devices may find applications as sensor or
photonics devices or can be incorporated in the back end of line (BEOL) to provide …

Uncovering the Effects of Metal Contacts on Monolayer MoS2

K Schauble, D Zakhidov, E Yalon, S Deshmukh… - ACS …, 2020 - ACS Publications
Metal contacts are a key limiter to the electronic performance of two-dimensional (2D)
semiconductor devices. Here, we present a comprehensive study of contact interfaces …

Two‐dimensional semiconductors: from device processing to circuit integration

C Sheng, X Dong, Y Zhu, X Wang… - Advanced Functional …, 2023 - Wiley Online Library
The atomically thin nature and exceptional electrical properties of 2D materials (2DMs) have
garnered significant interest in circuit applications. Researchers have developed circuits …

Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contact pitch and 250µA/µm drain current

Q Smets, G Arutchelvan, J Jussot… - 2019 IEEE …, 2019 - ieeexplore.ieee.org
We show that downscaling the top-contact length to 13nm induces no penalty on the
electrical characteristics for CVD MoS 2 FETs. We demonstrate this for devices with different …

2D materials: roadmap to CMOS integration

C Huyghebaert, T Schram, Q Smets… - 2018 IEEE …, 2018 - ieeexplore.ieee.org
To keep Moore's law alive, 2D materials are considered as a replacement for Si in advanced
nodes due to their atomic thickness, which offers superior performance at nm dimensions. In …

One-Dimensional Edge Contacts to Two-Dimensional Transition-Metal Dichalcogenides: Uncovering the Role of Schottky-Barrier Anisotropy in Charge Transport …

K Parto, A Pal, T Chavan, K Agashiwala, CH Yeh… - Physical Review …, 2021 - APS
This paper is a contribution to the joint Physical Review Applied and Physical Review
Materials collection titled Two-Dimensional Materials and Devices. One-dimensional (1D) …