As the success of nanostructures grows in modern society so does the importance of our
ability to control their synthesis in precise manners, often with atomic precision as this can …

An energetic electron beam has been used to stimulate crystallization of spatially isolated
amorphous regions in Si, Ge, GaP, and GaAs at 30 and 300 K. In the four materials it was …

Synthetic LaPO4, ScPO4, and crystalline natural zircon (ZrSiO4) from Mud Tanks, Australia
were irradiated by 1.5 MeV Kr+ ions until complete amorphization occurred as indicated by …

Single crystals of natural F-rich apatite and 800 keV Kr2+ ion-beam-amorphized apatite
were irradiated by an electron beam in a transmission electron microscope over a range of …

Spatially isolated amorphous zones produced in Si, Ge and Gal'by low energy, low dose ion
implantations can be regrown at room temperature by using an electron beam to stimulate …

Continuous amorphous foils produced in compound semiconductor GaAs by implantation of
100 keV Ar+ ions have been recrystallized under electron beam irradiation in a transmission …

Electron beam-induced crystallization of GeSi amorphous films with two different
compositions, Ge0. 7Si0. 3 and Ge0. 1Si0. 9, has been studied. The phase changes were …

A point defect diffusion model for ion beam induced crystallization and amorphization at the
amorphous/crystalline interface in Si is presented and shown to be successful in providing a …

Si and Ge samples of different crystal orientations were implanted at room temperature with
Xe+ ions to a dose around 1011cm− 2; this low dose produces spatially isolated amorphous …

The formation and ripening of Ge nanoclusters in a thin SiO2 layer under electron irradiation
in the transmission electron microscope was studied. Cross-sectional samples of a 20 nm …