LaAlO3/SrTiO3 Heterointerface: 20 Years and Beyond

S Chen, Y Ning, CS Tang, L Dai, S Zeng… - Advanced Electronic …, 2024‏ - Wiley Online Library
This year marks the 20th anniversary of the discovery of LaAlO3/SrTiO3 (LAO/STO) oxide
heterointerfaces. Since their discovery, transition metal oxide (TMO) interfaces have …

[HTML][HTML] Two-dimensional electron systems and interfacial coupling in LaCrO3/KTaO3 heterostructures

AH Al-Tawhid, DP Kumah, K Ahadi - Applied Physics Letters, 2021‏ - pubs.aip.org
The strong interfacial coupling at the 3d-5d transition metal-oxide interfaces has generated
excitement due to the possibility of engineering a wide range of quantum phenomena and …

Effect of electron concentration on electrical conductivity in in situ Al-TiB2 nanocomposites

S Pan, J Yuan, P Zhang, M Sokoluk, G Yao… - Applied Physics …, 2020‏ - pubs.aip.org
Electrical conductivity is important for the applications of metals containing nanoparticles,
and a thorough understanding of how nanoparticles affect their electrical conductivity is …

Novel Metal-Insulator Transition at the Interface

K Ahadi, S Stemmer - Physical Review Letters, 2017‏ - APS
We report on a metal-insulator transition (MIT) that is observed in an electron system at the
SmTiO 3/SrTiO 3 interface. This MIT is characterized by an abrupt transition at a critical …

Dynamic exchange effect induced multi-state magnetic phase diagram in manganese oxide Pr1-xCaxMnO3

N Jiang, Y Jiang, Q Lu, S Zhao - Journal of Alloys and Compounds, 2019‏ - Elsevier
The crystal structure and magnetic properties of Pr 1-x Ca x MnO 3 (PCMO) were
investigated systematically. It is shown that the symmetry of the structure is improved with the …

Superconductivity and Weak Anti-localization at KTaO3 (111) Interfaces

AH Al-Tawhid, J Kanter, M Hatefipour… - Journal of Electronic …, 2022‏ - Springer
The intersection of two-dimensional superconductivity and topologically nontrivial states
hosts a wide range of quantum phenomena, including Majorana fermions. We report on the …

Advanced stretchable characteristic of liquid metal for fabricating extremely stable electronics

R Zheng, Y Wu, Y Xu, S Liu, H Liu, P Wang, Z Deng… - Materials Letters, 2019‏ - Elsevier
In this work, an advanced stretchable characteristic of liquid metal (LM) was revealed for
fabricating a highly stretchable and extremely stable conductor. Thanks to the deformable …

Near room temperature giant negative and positive electrocaloric effects coexisting in lead–free BaZr0. 2Ti0. 8O3 relaxor ferroelectric films

F Guo, X Wu, Q Lu, S Zhao - Ceramics International, 2018‏ - Elsevier
Abstract BaZr 0.2 Ti 0.8 O 3 (BZT) relaxor ferroelectric (FE) films with tetragonal structure
were deposited on Pt/TiO 2/SiO 2/Si (100) substrates via a sol-gel technique. A giant …

Hf1− xZrxO2 and HfO2/ZrO2 gate dielectrics with extremely low density of interfacial defects using low temperature atomic layer deposition on GaN and InP

K Ahadi, K Cadien - Journal of Vacuum Science & Technology A, 2021‏ - pubs.aip.org
Achieving a negative capacitance field effect transistor with a subthreshold swing beyond
the Boltzmann limit requires a “defect-free” dielectric-semiconductor interface. We grew …

Electrical and optical properties of four-layered perovskite ferroelectric ABi4Ti4O15 (with A= Sr, Ba, Ca)

P Nayak, K Mitra, S Panigrahi - Materials Letters, 2018‏ - Elsevier
In this report, we present the electrical and optical properties of four-layered perovskite
ferroelectric ABi 4 Ti 4 O 15 (with A= Sr, Ba, Ca), prepared by solid-state reaction route. The …