The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …

A review is presented that covers the experimental and theoretical literature relating to the
preparation, electronic structure and chemical and physical properties of the surfaces of the …

The characteristic surface morphologies of GaN grown by plasma-assisted molecular beam
epitaxy under various growth conditions have been investigated. Three growth regimes one …

Iron doped GaN layers were grown by metalorganic chemical vapor deposition (MOCVD)
using ferrocene as the Fe precursor. Specular films with concentrations up to 1.7× 10 19 …

Abstract Growth of InGaN/GaN light-emitting devices on nonpolar or semipolar planes offers
a viable approach to reducing or eliminating the issues associated with polarization-related …

Gallium nitride (GaN) is an extremely promising wide band gap semiconductor material for
optoelectronics and high temperature, high power electronics. Actually, GaN is probably the …

Excess reverse-bias leakage in GaN films grown by molecular beam epitaxy on GaN
templates is correlated with the presence of pure screw dislocations. A scanning current …

The strain in GaN epitaxial layers grown on silicon (111) substrates by metalorganic vapor
phase epitaxy has been investigated. The insertion of AlN/GaN superlattices was found to …

The reverse bias leakage current in macroscopic GaN Schottky diodes is found to be
insensitive to barrier height. Using a scanning current–voltage microscope, we show that the …

We report on the effect of dislocation density on the ferroelectric properties of single-
crystalline ScAlN thin films grown by molecular beam epitaxy. Wurtzite phase and atomically …