Surface chemistry of ruthenium dioxide in heterogeneous catalysis and electrocatalysis: from fundamental to applied research
H Over - Chemical Reviews, 2012 - ACS Publications
Ruthenium is a chemical element that can easily adopt various formal oxidation states from−
II to+ VIII in chemical bonds,(1, 2) thus giving rise to many compounds with interesting and …
II to+ VIII in chemical bonds,(1, 2) thus giving rise to many compounds with interesting and …
ZnO Schottky barriers and Ohmic contacts
ZnO has emerged as a promising candidate for optoelectronic and microelectronic
applications, whose development requires greater understanding and control of their …
applications, whose development requires greater understanding and control of their …
Thermodynamic stability of binary oxides in contact with silicon
KJ Hubbard, DG Schlom - Journal of Materials Research, 1996 - cambridge.org
Using tabulated thermodynamic data, a comprehensive investigation of the thermo-dynamic
stability of binary oxides in contact with silicon at 1000 K was conducted. Reactions between …
stability of binary oxides in contact with silicon at 1000 K was conducted. Reactions between …
Charge transfer on the nanoscale: current status
This is the report of a DOE-sponsored workshop organized to discuss the status of our
understanding of charge-transfer processes on the nanoscale and to identify research and …
understanding of charge-transfer processes on the nanoscale and to identify research and …
[HTML][HTML] Construction of novel Ru-embedded bulk g-C3N4 photocatalysts toward efficient and sustainable photocatalytic hydrogen production
M Ismael - Diamond and Related Materials, 2024 - Elsevier
Novel Ru-embedded bulk graphitic carbon nitride (gC 3 N 4) photocatalysts containing
different wt% of Ru (0.5–2% wt) were synthesized by a simple mixing method of ruthenium …
different wt% of Ru (0.5–2% wt) were synthesized by a simple mixing method of ruthenium …
Ru and RuO x decorated carbon nitride for efficient ammonia photosynthesis
Photocatalytic ammonia synthesis is a promising strategy for sustainable development
compared to the energy-intensive industrial Haber–Bosch approach. Herein, a ternary …
compared to the energy-intensive industrial Haber–Bosch approach. Herein, a ternary …
Radiation-assisted selective deposition of metal-containing cap layers
T Ishizaka, S Mizuno - US Patent 8,716,132, 2014 - Google Patents
2003/0129306 A1 T/2003 2005/0078462 A1* 4, 2005 2005, 0110142 A1 5, 2005
2006.0113675 A1 6, 2006 2006, O121733 A1 6, 2006 2006, O131751 A1 6, 2006 …
2006.0113675 A1 6, 2006 2006, O121733 A1 6, 2006 2006, O131751 A1 6, 2006 …
Ruthenium thin films grown by atomic layer deposition
T Aaltonen, P Alen, M Ritala… - Chemical Vapor …, 2003 - Wiley Online Library
Thin films of metallic ruthenium were grown by atomic layer deposition (ALD) in the
temperature range 275–400° C using bis (cyclopentadienyl) ruthenium (RuCp2) and oxygen …
temperature range 275–400° C using bis (cyclopentadienyl) ruthenium (RuCp2) and oxygen …
Progress in the developments of (Ba, Sr) TiO3 (BST) thin films for Gigabit era DRAMs
S Ezhilvalavan, TY Tseng - Materials Chemistry and Physics, 2000 - Elsevier
This paper reviews the recent developments of (Ba, Sr) TiO3 (BST) thin films for future Gbit
era dynamic random access memory (DRAM) applications. The trends of DRAM capacitors …
era dynamic random access memory (DRAM) applications. The trends of DRAM capacitors …
Capacitors with an equivalent oxide thickness of< 0.5 nm for nanoscale electronic semiconductor memory
The recent progress in the metal‐insulator‐metal (MIM) capacitor technology is reviewed in
terms of the materials and processes mostly for dynamic random access memory (DRAM) …
terms of the materials and processes mostly for dynamic random access memory (DRAM) …