The future of two-dimensional semiconductors beyond Moore's law
The primary challenge facing silicon-based electronics, crucial for modern technological
progress, is difficulty in dimensional scaling. This stems from a severe deterioration of …
progress, is difficulty in dimensional scaling. This stems from a severe deterioration of …
Critical challenges in the development of electronics based on two-dimensional transition metal dichalcogenides
The development of high-performance electronic devices based on two-dimensional (2D)
transition metal dichalcogenide semiconductors has recently advanced from one-off proof-of …
transition metal dichalcogenide semiconductors has recently advanced from one-off proof-of …
Synthesis, modulation, and application of two-dimensional TMD heterostructures
R Wu, H Zhang, H Ma, B Zhao, W Li, Y Chen… - Chemical …, 2024 - ACS Publications
Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have
attracted a lot of attention due to their rich material diversity and stack geometry, precise …
attracted a lot of attention due to their rich material diversity and stack geometry, precise …
Large-Area Epitaxial Growth of Transition Metal Dichalcogenides
Over the past decade, research on atomically thin two-dimensional (2D) transition metal
dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high …
dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high …
Integration of high-κ native oxides of gallium for two-dimensional transistors
The deposition of a metal oxide layer with good dielectric properties is a critical step in
fabricating the gate dielectric of transistors based on two-dimensional semiconductors …
fabricating the gate dielectric of transistors based on two-dimensional semiconductors …
Quantifying Structural Polarization by Continuous Regulation of Lone-Pair Electron Expression in Molecular Crystals
Rational design of structural polarization is vital for modern technologies, as it allows the
physical properties of functional materials to be tailored. An effective approach for governing …
physical properties of functional materials to be tailored. An effective approach for governing …
Ultraflat single-crystal hexagonal boron nitride for wafer-scale integration of a 2D-compatible high-κ metal gate
Hexagonal boron nitride (hBN) has emerged as a promising protection layer for dielectric
integration in the next-generation large-scale integrated electronics. Although numerous …
integration in the next-generation large-scale integrated electronics. Although numerous …
Vertically grown metal nanosheets integrated with atomic-layer-deposited dielectrics for transistors with subnanometre capacitance-equivalent thicknesses
L Zhang, Z Liu, W Ai, J Chen, Z Lv, B Wang, M Yang… - Nature …, 2024 - nature.com
Integrating thin atomic-layer-deposited dielectrics with two-dimensional (2D)
semiconductors could be used to fabricate 2D transistors with sub-1 nm capacitance …
semiconductors could be used to fabricate 2D transistors with sub-1 nm capacitance …
Interface states in gate stack of carbon nanotube array transistors
Y Liu, S Ding, W Li, Z Zhang, Z Pan, Y Ze, B Gao… - ACS …, 2024 - ACS Publications
A deep understanding of the interface states in metal–oxide–semiconductor (MOS)
structures is the premise of improving the gate stack quality, which sets the foundation for …
structures is the premise of improving the gate stack quality, which sets the foundation for …
Solution-Processable and Printable Two-Dimensional Transition Metal Dichalcogenide Inks
Two-dimensional (2D) transition metal dichalcogenides (TMDs) with layered crystal
structures have been attracting enormous research interest for their atomic thickness …
structures have been attracting enormous research interest for their atomic thickness …