Atomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-
effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large …

In the past few decades, circuits based on gallium nitride high electron mobility transistor
(GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and …

The transistor is the key enabler of modern electronics. Progress in transistor scaling has
pushed channel lengths to the nanometer regime where traditional approaches to device …

The energy distributions of electrons in gate-all-around (GAA) Si MOSFETs are analyzed
using full-band 3-D Monte Carlo (MC) simulations. Excellent agreement is obtained with …

In this work, a universal carrier backscattering model was proposed and developed for the
ballistic analysis of thin channel nanoscale transistors, which extends the usage of the …

Vertical III-V nanowire MOSFETs show potential towards the ultimate transistor scaling. A
high transconductance and current density are achieved based on the gate-all-around …

Universality of short-channel effects on saturation current of MOSFETs has been
demonstrated. The modulations of carrier injection and transmission rate have been …

Recent advances in the fabrication technology have yielded nanometer-scale InGaAs
quantum-well (QW) MOSFETs with extremely low and reproducible external contact and …

In this paper, we have proposed a new analytical model for FETs working in the quasi-
ballistic regime. The model is based on a calculation of the charge density along the …

The Matthiessen-law combination of diffusive and ballistic mobility provides a framework to
explain the decrease of apparent mobility in near-ballistic FETs. While this theory works well …