On the Potential of Ambipolar Schottky-Based Ferroelectric Transistor Designs for Enhanced Memory Windows in Scaled Devices
Ferroelectric memory devices have seen intense interest over the last decade. However, in
heavily scaled devices such as silicon-on-insulator (SOI), FinFETs, and nanowire-based …
heavily scaled devices such as silicon-on-insulator (SOI), FinFETs, and nanowire-based …