The mechanisms of size-dependent efficiency and efficiency droop of blue InGaN micro-
pixel light emitting diodes (μLEDs) have been investigated experimentally and by …

The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field
effect transistor (MOSFET) is a promising architecture for the development of efficient GaN …

Micro-LED has attracted tremendous attention as next-generation display, but InGaN red-
green-blue (RGB) based high-efficiency micro-LEDs, especially red InGaN micro-LED, face …

In a combined experimental and numerical investigation, we present the effects of trap‐
assisted tunneling on the sub‐threshold forward bias characteristics of a blue InGaN/GaN …

Implementing bifacial photovoltaic devices based on transparent conducting oxides (TCO)
as the front and back contacts is highly appealing to improve the efficiency of kesterite solar …

Electrical do** of metal halide perovskites (MPHs) is a key step towards the use of this
efficient and cost-effective semiconductor class in modern electronics. In this work, we …

By examining two types of lateral InGaN/GaN light emitting diodes with different contact
patterns, we demonstrate that in the intermediate range of current where the space-charge …

Local dot-like emissions in InGaN/GaN-based light-emitting diodes under both forward and
reverse biases are investigated by carefully examining their locations and …

This paper presents detailed analysis of forward and reverse bias IV and CV characteristics
of Al/Al 2 O 3/PVA: n-ZnSe metal-oxide-semiconductor diode. PVA: n-ZnSe nanocomposites …

InGaN-based nanowires (NWs) have been extensively studied for photoelectrochemical
(PEC) water splitting devices owing to their tunable bandgap and good chemical stability …