A theoretical formalism to calculate the single crystal elastic constants for orthorhombic
crystals from first principle calculations is described. This is applied for TiSi 2 and we …

Studies of the properties and characteristics of transition metal silicides have been
stimulated by their (potential) use in integrated circuit technology. This review describes …

Semiconductors are well known as the main materials of modem solid-state electronics.
They have held the attention of researches and engineers since the brilliant invention of the …

This review presents an overview on the recent progress achieved in the epitaxial growth of
Ni and Co silicides on Si (111) by UHV deposition techniques. While focusing on the …

Using an all-electron, self-consistent, full-potential, linear muffin-tin-orbitals method within
the local-density approximation of density-functional theory, we have studied the structural …

We present a combined theoretical and experimental investigation of the electron properties
of calcium silicides (Ca 2 Si, CaSi, and CaSi 2). The theoretical study is performed by a self …

We report a detailed study of the electronic and structural properties of the 39 K
superconductor MgB 2 and of several related systems of the same family, namely, Mg 0.5 Al …

Electrical transport and optical properties of transition-metal silicides are reviewed. They are
integrated with thermal properties of single-crystal silicides. Most of these compounds …

The results of linear augmented-plane-wave band calculations for hexagonal CrSi 2, carried
out in the local-density approximation, confirm that this compound is an indirect-gap …

Linear augmented-plane-wave calculations of the electronic and structural properties of
CaSi 2 for three types of stacking of Ca layers and Si double layers are presented. The …