Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
2022 roadmap on neuromorphic computing and engineering
Modern computation based on von Neumann architecture is now a mature cutting-edge
science. In the von Neumann architecture, processing and memory units are implemented …
science. In the von Neumann architecture, processing and memory units are implemented …
Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing
In the growing area of neuromorphic and in-memory computing, there are multiple reviews
available. Most of them cover a broad range of topics, which naturally comes at the cost of …
available. Most of them cover a broad range of topics, which naturally comes at the cost of …
Comprehensive model of electron conduction in oxide-based memristive devices
C Funck, S Menzel - ACS Applied electronic materials, 2021 - ACS Publications
Memristive devices are two-terminal devices that can change their resistance state upon
application of appropriate voltage stimuli. The resistance can be tuned over a wide …
application of appropriate voltage stimuli. The resistance can be tuned over a wide …
Variability-aware modeling of filamentary oxide-based bipolar resistive switching cells using SPICE level compact models
C Bengel, A Siemon, F Cüppers… - … on Circuits and …, 2020 - ieeexplore.ieee.org
Bipolar resistive switching (BRS) cells based on the valence change mechanism show great
potential to enable the design of future non-volatile memory, logic and neuromorphic circuits …
potential to enable the design of future non-volatile memory, logic and neuromorphic circuits …
Spiking neural network (snn) with memristor synapses having non-linear weight update
Among many artificial neural networks, the research on Spike Neural Network (SNN), which
mimics the energy-efficient signal system in the brain, is drawing much attention. Memristor …
mimics the energy-efficient signal system in the brain, is drawing much attention. Memristor …
[HTML][HTML] Resistive switching in emerging materials and their characteristics for neuromorphic computing
Resistive random access memory would be an important component of microelectronics in
the era of big data storage due to its efficient characteristics such as low cost, fast operating …
the era of big data storage due to its efficient characteristics such as low cost, fast operating …
[HTML][HTML] Tailoring the synaptic properties of a-IGZO memristors for artificial deep neural networks
Neuromorphic computation based on resistive switching devices represents a relevant
hardware alternative for artificial deep neural networks. For the highest accuracies on …
hardware alternative for artificial deep neural networks. For the highest accuracies on …
A Deep Study of Resistance Switching Phenomena in TaOx ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification
The multidisciplinary field of memristors calls for the necessity for theoretically‐inclined
researchers and experimenters to join forces, merging complementary expertise and …
researchers and experimenters to join forces, merging complementary expertise and …
Filamentary TaOx/HfO2 ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing
The in‐memory computing paradigm aims at overcoming the intrinsic inefficiencies of Von‐
Neumann computers by reducing the data‐transport per arithmetic operation. Crossbar …
Neumann computers by reducing the data‐transport per arithmetic operation. Crossbar …