Nanoionic memristive phenomena in metal oxides: the valence change mechanism

R Dittmann, S Menzel, R Waser - Advances in Physics, 2021 - Taylor & Francis
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

2022 roadmap on neuromorphic computing and engineering

DV Christensen, R Dittmann… - Neuromorphic …, 2022 - iopscience.iop.org
Modern computation based on von Neumann architecture is now a mature cutting-edge
science. In the von Neumann architecture, processing and memory units are implemented …

Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing

M Hellenbrand, J MacManus-Driscoll - Nano Convergence, 2023 - Springer
In the growing area of neuromorphic and in-memory computing, there are multiple reviews
available. Most of them cover a broad range of topics, which naturally comes at the cost of …

Comprehensive model of electron conduction in oxide-based memristive devices

C Funck, S Menzel - ACS Applied electronic materials, 2021 - ACS Publications
Memristive devices are two-terminal devices that can change their resistance state upon
application of appropriate voltage stimuli. The resistance can be tuned over a wide …

Variability-aware modeling of filamentary oxide-based bipolar resistive switching cells using SPICE level compact models

C Bengel, A Siemon, F Cüppers… - … on Circuits and …, 2020 - ieeexplore.ieee.org
Bipolar resistive switching (BRS) cells based on the valence change mechanism show great
potential to enable the design of future non-volatile memory, logic and neuromorphic circuits …

Spiking neural network (snn) with memristor synapses having non-linear weight update

T Kim, S Hu, J Kim, JY Kwak, J Park, S Lee… - Frontiers in …, 2021 - frontiersin.org
Among many artificial neural networks, the research on Spike Neural Network (SNN), which
mimics the energy-efficient signal system in the brain, is drawing much attention. Memristor …

[HTML][HTML] Resistive switching in emerging materials and their characteristics for neuromorphic computing

M Asif, A Kumar - Materials Today Electronics, 2022 - Elsevier
Resistive random access memory would be an important component of microelectronics in
the era of big data storage due to its efficient characteristics such as low cost, fast operating …

[HTML][HTML] Tailoring the synaptic properties of a-IGZO memristors for artificial deep neural networks

ME Pereira, J Deuermeier, P Freitas, P Barquinha… - APL Materials, 2022 - pubs.aip.org
Neuromorphic computation based on resistive switching devices represents a relevant
hardware alternative for artificial deep neural networks. For the highest accuracies on …

A Deep Study of Resistance Switching Phenomena in TaOx ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification

A Ascoli, S Menzel, V Rana, T Kempen… - Advanced Electronic …, 2022 - Wiley Online Library
The multidisciplinary field of memristors calls for the necessity for theoretically‐inclined
researchers and experimenters to join forces, merging complementary expertise and …

Filamentary TaOx/HfO2 ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing

T Stecconi, R Guido, L Berchialla… - Advanced electronic …, 2022 - Wiley Online Library
The in‐memory computing paradigm aims at overcoming the intrinsic inefficiencies of Von‐
Neumann computers by reducing the data‐transport per arithmetic operation. Crossbar …