GaN FinFETs and trigate devices for power and RF applications: Review and perspective
Gallium nitride (GaN) is becoming a mainstream semiconductor for power and radio-
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …
A review on the artificial neural network applications for small‐signal modeling of microwave FETs
The purpose of this paper is to provide a comprehensive overview of the field‐effect
transistor (FET) small‐signal modeling using artificial neural networks (ANNs). To gain an in …
transistor (FET) small‐signal modeling using artificial neural networks (ANNs). To gain an in …
Device design guideline of 5-nm-node FinFETs and nanosheet FETs for analog/RF applications
Analog/RF performances of 5-nm node bulk fin-shaped field-effect transistors (FinFETs) and
nanosheet FETs (NSFETs) were investigated and compared thoroughly using fully …
nanosheet FETs (NSFETs) were investigated and compared thoroughly using fully …
[HTML][HTML] Comprehensive Review of FinFET Technology: History, Structure, Challenges, Innovations, and Emerging Sensing Applications
The surge in demand for 3D MOSFETs, such as FinFETs, driven by recent technological
advances, is explored in this review. FinFETs, positioned as promising alternatives to bulk …
advances, is explored in this review. FinFETs, positioned as promising alternatives to bulk …
Accurate modeling of cryogenic temperature effects in 10-nm bulk CMOS FinFETs using the BSIM-CMG model
In this letter, we have proposed modifications to the existing BSIM-CMG compact model to
enhance its ability to model the behavior of short channel bulk FinFETs (both n and p-type) …
enhance its ability to model the behavior of short channel bulk FinFETs (both n and p-type) …
The large world of FET small‐signal equivalent circuits
The small‐signal equivalent circuit modeling of microwave field‐effect transistors (FETs) is
an evergreen and ever flourishing research field that has to be up‐to‐date with …
an evergreen and ever flourishing research field that has to be up‐to‐date with …
[HTML][HTML] Hot carrier injection reliability in nanoscale field effect transistors: Modeling and simulation methods
Y Wang, Y Li, Y Yang, W Chen - Electronics, 2022 - mdpi.com
Hot carrier injection (HCI) can generate interface traps or oxide traps mainly by dissociating
the Si-H or Si-O bond, thus affecting device performances such as threshold voltage and …
the Si-H or Si-O bond, thus affecting device performances such as threshold voltage and …
Parasitic gate capacitance model for triple-gate FinFETs
Triple-gate FinFETs have demonstrated to be promising candidates to push further the
performance limits of the microelectronics industry, thanks to their high immunity to short …
performance limits of the microelectronics industry, thanks to their high immunity to short …
GaN HEMT noise modeling based on 50‐Ω noise factor
The extraction of a high‐frequency ivalent circuit model plays a fundamental role for the
development of any emerging transistor technology. Indeed, an equivalent circuit can …
development of any emerging transistor technology. Indeed, an equivalent circuit can …
An artificial neural network model for electro-thermal effect affected hot carrier injection reliability in 14-nm FinFETs
Y Wang, E Li, H Duan, L Tian, W Zang… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
FinFETs have a bright future for advanced analog/RF and digital circuit design in 5G/6G
technology. As the integration density increases, the self-heating effect (SHE) becomes …
technology. As the integration density increases, the self-heating effect (SHE) becomes …