Physical principles and current status of emerging non-volatile solid state memories

L Wang, CH Yang, J Wen - Electronic materials letters, 2015 - Springer
Today the influence of non-volatile solid-state memories on persons' lives has become more
prominent because of their non-volatility, low data latency, and high robustness. As a …

Product code schemes for error correction in MLC NAND flash memories

C Yang, Y Emre, C Chakrabarti - IEEE Transactions on Very …, 2011 - ieeexplore.ieee.org
Error control coding (ECC) is essential for correcting soft errors in Flash memories. In this
paper we propose use of product code based schemes to support higher error correction …

Quantifying the potential benefit of overlap** communication and computation in large-scale scientific applications

JC Sancho, KJ Barker, DJ Kerbyson… - Proceedings of the 2006 …, 2006 - dl.acm.org
The design and implementation of a high performance communication network are critical
factors in determining the performance and cost-effectiveness of a largescale computing …

Estimation of NAND flash memory threshold voltage distribution for optimum soft-decision error correction

D Lee, W Sung - IEEE Transactions on Signal Processing, 2012 - ieeexplore.ieee.org
As the feature size of NAND flash memory decreases, the threshold voltage signal becomes
less reliable, and its distribution varies significantly with the number of program-erase (PE) …

Flash-oriented Coded Storage: Research Status and Future Directions

Z Li, G Zhang, Y Wang - ACM Transactions on Storage, 2024 - dl.acm.org
Flash-based solid-state drives (SSDs) have been widely adopted in various storage
systems, manifesting better performance than their forerunner HDDs. However, the …

Quasi-cross lattice tilings with applications to flash memory

M Schwartz - IEEE transactions on information theory, 2011 - ieeexplore.ieee.org
We consider lattice tilings of ℝ n by a shape we call a (k+, k-, n)-quasi-cross. Such lattices
form perfect error-correcting codes which correct a single limited-magnitude error with …

Efficient architectures for generalized integrated interleaved decoder

X Zhang, Z **e - IEEE Transactions on Circuits and Systems I …, 2019 - ieeexplore.ieee.org
Generalized integrated interleaved (GII) codes allow localized decoding of short sub-
codewords. They are essential to hyper-speed data storage, communications, and …

Read leveling for flash storage systems

CY Liu, YM Chang, YH Chang - … of the 8th ACM International Systems …, 2015 - dl.acm.org
Due to its several attractive benefits such as shock resistance, energy efficiency, and space-
efficient form factor, flash memory is now applied to a wide range of electronics. Typically …

A configurable Bose–Chaudhuri–Hocquenghem codec architecture for flash controller applications

J Freudenberger, J Spinner - Journal of Circuits, Systems, and …, 2014 - World Scientific
Error correction coding (ECC) has become one of the most important tasks of flash memory
controllers. The gate count of the ECC unit is taking up a significant share of the overall …

Decision directed estimation of threshold voltage distribution in NAND flash memory

D Lee, W Sung - IEEE transactions on signal processing, 2013 - ieeexplore.ieee.org
High-density NAND flash memory suffers from the data retention problem because even
small charge leakage incurs a large threshold voltage shift as the transistor size shrinks. In …