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Ultrawide-bandgap semiconductor AlN crystals: growth and applications
In recent years, ultrawide bandgap semiconductor materials represented by aluminum
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …
State-of-the-art and prospective progress of growing AlN substrates by physical vapor transport
X Yao, B Zhang, H Hu, Y Wang, Z Kong, Y Wu… - Journal of Crystal …, 2023 - Elsevier
Abstract SiC, GaN, diamond, and AlN known as wide band-gap semiconductors, integrate
the advantages of microelectronics, optoelectronics, and power electronics. The ultra-wide …
the advantages of microelectronics, optoelectronics, and power electronics. The ultra-wide …
[HTML][HTML] High electron mobility in AlN: Si by point and extended defect management
High room temperature n-type mobility, exceeding 300 cm 2/Vs, was demonstrated in Si-
doped AlN. Dislocations and CN− 1 were identified as the main compensators for AlN grown …
doped AlN. Dislocations and CN− 1 were identified as the main compensators for AlN grown …
Bulk AlN growth by physical vapour transport
The process technologies of AlN growth by physical vapour transport are reviewed in this
paper with a focus on the growth parameters, crucible materials, and the type of …
paper with a focus on the growth parameters, crucible materials, and the type of …
Thermal conductivity of single-crystalline AlN
The thermal conductivity of AlN single crystals grown by physical vapor transport (PVT) and
hydride vapor phase epitaxy (HVPE) was measured in the range of 30 to 325 K by the 3ω …
hydride vapor phase epitaxy (HVPE) was measured in the range of 30 to 325 K by the 3ω …
Low dislocation density AlN on sapphire prepared by double sputtering and annealing
Low dislocation density AlN on sapphire prepared by double sputtering and annealing -
IOPscience Skip to content IOP Science home Accessibility Help Search Search all IOPscience …
IOPscience Skip to content IOP Science home Accessibility Help Search Search all IOPscience …
Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices
In this paper, the optimal growth conditions during the physical vapour transport of bulk AlN
crystals are evaluated with regard to significantly increased deep UV transparency, while …
crystals are evaluated with regard to significantly increased deep UV transparency, while …
Low dark current deep UV AlGaN photodetectors on AlN substrate
We report high quality, low dark current, deep Ultraviolet AlGaN/AlN Photodetectors on AlN
substrate. AlGaN based Photodetectors are grown and fabricated both on AlN and Sapphire …
substrate. AlGaN based Photodetectors are grown and fabricated both on AlN and Sapphire …
High-quality AlN/sapphire templates prepared by thermal cycle annealing for high-performance ultraviolet light-emitting diodes
Thermal cycle annealing (TCA) is introduced to accelerate the dislocation annihilation in
sputter-deposited AlN films on sapphire. Compared with constant temperature annealing …
sputter-deposited AlN films on sapphire. Compared with constant temperature annealing …
Preparation of bulk AlN seeds by spontaneous nucleation of freestanding crystals
Freestanding AlN single crystals are grown in a RF-heated furnace by physical vapor
transport (PVT). Three different growth regimes with growth temperatures between 2080 …
transport (PVT). Three different growth regimes with growth temperatures between 2080 …