Diamond is known as the ultimate semiconductor material for electric devices with excellent
properties such as an ultra-wide bandgap (5.47 eV), high carrier mobility (electron mobility …

Beta phase-gallium oxide (β-Ga 2 O 3) is an emerging ultrawide bandgap semiconductor
but lacks efficient p-type do**, which hinders development of high-performance bipolar …

Beta-phase gallium oxide (β-Ga 2 O 3) has exceptional electronic properties with vast
potential in power and radio frequency electronics. Despite the excellent demonstrations of …

As an attractive next generation ultrawide bandgap material, Ga 2 O 3 has been
demonstrated to be capable of high voltage operation. However, the lack of shallow p-type …

In this work, we report a single crystalline p-Si/(001)-Ga2O3 heterojunction diode fabricated
using semiconductor grafting technology. The diode showed a breakdown voltage (of~ 0.86 …

Single‐crystalline inorganic semiconductor nanomembranes (NMs) have attracted great
attention over the last decade, which poses great advantages to complex device integration …

The emergence of artificial intelligence, big data processing, electrical vehicle technologies
and so on necessitates a new approach to address the scaling, power efficiency and …

We report the fabrication and characteristics of native oxides-interfaced heterovalent
GaAs/Ge np heterojunction diodes. The native oxides (GaAs) xOy and GexOy were …

The short-wave infrared (SWIR) wavelength, especially 1.55 μm, has attracted significant
attention in various areas such as high-speed optical communication and LiDAR systems …

Ultra-wide bandgap (UWBG) materials offer significant potential for high-power RF
electronics and deep ultraviolet photonics. Among these, Al x Ga 1− x N stands out due to its …