5G cellular user equipment: From theory to practical hardware design
Research and development on the next generation wireless systems, namely 5G, has
experienced explosive growth in recent years. In the physical layer, the massive multiple …
experienced explosive growth in recent years. In the physical layer, the massive multiple …
A 28-/37-/39-GHz linear Doherty power amplifier in silicon for 5G applications
This paper presents the first 28-/37-/39-GHz linear Doherty power amplifier (PA) in silicon for
broadband fifthgeneration (5G) applications. We introduce a new transformer-based on-chip …
broadband fifthgeneration (5G) applications. We introduce a new transformer-based on-chip …
A highly efficient and linear power amplifier for 28-GHz 5G phased array radios in 28-nm CMOS
This paper presents the first linear bulk CMOS power amplifier (PA) targeting low-power fifth-
generation (5G) mobile user equipment integrated phased array transceivers. The output …
generation (5G) mobile user equipment integrated phased array transceivers. The output …
On the Design of Wideband Transformer-Based Fourth Order Matching Networks for -Band Receivers in 28-nm CMOS
This paper discusses the design of on-chip transformer-based fourth order filters, suitable for
mm-Wave highly sensitive broadband low-noise amplifiers (LNAs) and receivers (RXs) …
mm-Wave highly sensitive broadband low-noise amplifiers (LNAs) and receivers (RXs) …
A wideband class-AB power amplifier with 29–57-GHz AM–PM compensation in 0.9-V 28-nm bulk CMOS
A wideband amplitude to phase (AM-PM) compensated class-AB power amplifier (PA)
suitable for highly integrated fifth-generation phased arrays is designed in 0.9-V 28-nm …
suitable for highly integrated fifth-generation phased arrays is designed in 0.9-V 28-nm …
A coupler-based differential mm-wave Doherty power amplifier with impedance inverting and scaling baluns
Designing Doherty power amplifiers (PAs) at high millimeter-wave (mm-Wave) range
remains a major challenge because most Doherty combiners at this frequency band are …
remains a major challenge because most Doherty combiners at this frequency band are …
A high-efficiency 142–182-GHz SiGe BiCMOS power amplifier with broadband slotline-based power combining technique
In this article, a high-efficiency broadband millimeter-wave (mm-Wave) integrated power
amplifier (PA) with a low-loss slotline-based power combing technique is proposed. The …
amplifier (PA) with a low-loss slotline-based power combing technique is proposed. The …
W-band scalable 2× 2 phased-array transmitter and receiver chipsets in SiGe BiCMOS for high data-rate communication
H Li, J Chen, D Hou, Z Li, R Zhou… - IEEE Journal of Solid …, 2022 - ieeexplore.ieee.org
This article presents a pair of W-band phased-array transmitter (TX) and receiver (RX)
chipsets in a 0.13-SiGe BiCMOS process for high data-rate wireless communication. Both …
chipsets in a 0.13-SiGe BiCMOS process for high data-rate wireless communication. Both …
24.7 A 15dBm 12.8%-PAE compact D-band power amplifier with two-way power combining in 16nm FinFET CMOS
The drive for higher data-rates has led to the allocation of the spectrum above 100GHz for D-
band communication. A high level of integration in a nm-CMOS technology is necessary to …
band communication. A high level of integration in a nm-CMOS technology is necessary to …
A 40-nm CMOS E-band 4-way power amplifier with neutralized bootstrapped cascode amplifier and optimum passive circuits
D Zhao, P Reynaert - IEEE Transactions on Microwave Theory …, 2015 - ieeexplore.ieee.org
This paper reports a fully integrated 40-nm CMOS power amplifier (PA) for E-band
applications. A neutralized bootstrapped cascode amplifier (NBCA) topology is proposed to …
applications. A neutralized bootstrapped cascode amplifier (NBCA) topology is proposed to …