Abstract 2D materials are considered to be the most promising materials for photodetectors
due to their unique optical and electrical properties. Since the discovery of graphene, many …

Conventional semiconductors such as silicon‐and indium gallium arsenide (InGaAs)‐based
photodetectors have encountered a bottleneck in modern electronics and photonics in terms …

Unipolar barrier structures are used to suppress dark current in photodetectors by blocking
majority carriers. Designing unipolar barriers with conventional materials is challenging due …

Graphene and the following derivative 2D materials have been demonstrated to exhibit rich
distinct optoelectronic properties, such as broadband optical response, strong and tunable …

Photodetection over a broad spectral range is crucial for optoelectronic applications such as
sensing, imaging, and communication. Herein, a high‐performance ultra‐broadband …

Semimetals are being explored for their unique advantages in low-energy high-speed
photodetection, although they suffer from serious drawbacks such as an intrinsically high …

Van der Waals heterostructures (vdWHs) based on 2D layered materials with selectable
materials properties pave the way to integration at the atomic scale, which may give rise to …

The hybridization of two‐dimensional transition metal dichalcogenides (2D TMDs) with other
light‐sensitive materials to fabricate the TMD‐based heterostructures is an effective way to …

The photogating effect in hybrid structures has manifested itself as a reliable and promising
approach for photodetectors with ultrahigh responsivity. A crucial factor of the photogating …

High quantum efficiency and wide-band detection capability are the major thrusts of infrared
sensing technology. However, bulk materials with high efficiency have consistently …