Probing surface and interface morphology with grazing incidence small angle X-ray scattering

G Renaud, R Lazzari, F Leroy - Surface Science Reports, 2009 - Elsevier
Nanoscience and nanotechnology are tremendously increasing fields of research that aim at
producing, characterizing and understanding nanoobjects and assemblies of nanoobjects …

Growth and self-organization of SiGe nanostructures

JN Aqua, I Berbezier, L Favre, T Frisch, A Ronda - Physics Reports, 2013 - Elsevier
Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …

Coarsening, mixing, and motion: the complex evolution of epitaxial islands

Y Tu, J Tersoff - Physical review letters, 2007 - APS
During heteroepitaxy, misfit strain causes nanoscale islands to form spontaneously, as “self-
assembled quantum dots.” The growth and evolution of these islands are remarkably …

Shape transition during epitaxial growth of quantum dots on : Theory and experiment

P Kratzer, QKK Liu, P Acosta-Diaz, C Manzano… - Physical Review B …, 2006 - APS
For heteroepitaxial growth of InAs islands on GaAs (001), a transition of shapes is observed
experimentally by scanning-tunneling microscopy and analyzed theoretically in terms of the …

Differential stress induced by thiol adsorption on facetted nanocrystals

M Watari, RA McKendry, M Vögtli, G Aeppli, YA Soh… - Nature materials, 2011 - nature.com
Polycrystalline gold films coated with thiol-based self-assembled monolayers (SAM) form the
basis of a wide range of nanomechanical sensor platforms. The detection of adsorbates with …

Nanoclusters first: a hierarchical phase transformation in a novel Mg alloy

H Okuda, M Yamasaki, Y Kawamura, M Tabuchi… - Scientific reports, 2015 - nature.com
Abstract The Mg-Y-Zn ternary alloy system contains a series of novel structures known as
long-period stacking ordered (LPSO) structures. The formation process and its key concept …

Local equilibrium and global relaxation of strained layers

M Stoffel, A Rastelli, J Tersoff, T Merdzhanova… - Physical Review B …, 2006 - APS
We investigate the morphological evolution of islands obtained by epitaxial growth of Ge on
Si (001) substrates. We are able to obtain highly uniform distributions of SiGe islands, which …

Mesoscopic and microscopic modeling of island formation in strained film epitaxy

ZF Huang, KR Elder - Physical review letters, 2008 - APS
The instability of strained films for island formation is examined through an approach
incorporating both discrete microscopic details and continuum mechanics. A linear …

Self-assembled InAs quantum dots on patterned GaAs (001) substrates: Formation and shape evolution

S Kiravittaya, A Rastelli, OG Schmidt - Applied Physics Letters, 2005 - pubs.aip.org
We report on the formation of ordered and size homogeneous InAs quantum dot (QD) arrays
on patterned GaAs (001) substrates. A material depletion region is observed around the …

Nonlinear evolution of a morphological instability in a strained epitaxial film

JN Aqua, T Frisch, A Verga - Physical Review B—Condensed Matter and …, 2007 - APS
A strained epitaxial film deposited on a deformable substrate undergoes a morphological
instability, relaxing the elastic energy by surface diffusion. The nonlinear dynamical equation …