We have studied the sensitivity of AlGaAs/GaAs double barrier resonant tunneling diode
photodetectors with an integrated GaInNAs absorption layer for light sensing at the …

We have investigated photodetectors based on an AlGaAs/GaAs double barrier structure
with a nearby lattice-matched GaInNAs absorption layer. Photons with the …

Low-noise single-photon detectors that can resolve photon numbers are used to monitor the
operation of quantum gates in linear-optical quantum computation. Exactly 0, 1 or 2 photons …

An efficient single-photon detector at telecom wavelength of 1.55 μ m was realized with an
InGaAs/InP avalanche photodiode at− 30 C⁠. By implementing a short gating pulse and …

We report on a resonant tunneling diode (RTD) photodetector using type-II InAs/GaSb
superlattices with an InAs/AlSb double barrier structure. At 80 K, the maximum response of …

The dark current characteristics and temperature dependence for quantum dot infrared
photodetectors have been investigated by comparing the dark current activation energies …

Quantum dot resonant tunneling diode single photon detector with independently defined
absorption and sensing areas is demonstrated. The device, in which the tunneling is …

We present room temperature resonant tunneling of GaSb/AlAsSb double barrier resonant
tunneling diodes with pseudomorphically grown prewell emitter structures comprising the …

We present the photocurrent spectrum study of a quantum dot (QD) single-photon detector
using a reset technique which eliminates the QD's “memory effect.” By applying a proper …

We investigate the electronic transport properties of GaSb/AlAsSb double barrier resonant
tunneling diodes with pseudomorphically grown ternary GaAs x Sb 1-x emitter prewells over …