The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage …

The scaling of complementary metal oxide semiconductor transistors has led to the silicon
dioxide layer, used as a gate dielectric, being so thin (1.4 nm) that its leakage current is too …

QUANTUM ESPRESSO is an integrated suite of computer codes for electronic-structure
calculations and materials modeling, based on density-functional theory, plane waves, and …

The formation of the Schottky barrier height (SBH) is a complex problem because of the
dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface …

The integration of ferroelectric oxide films into microelectronic devices,, combined with the
size reduction constraints imposed by the semiconductor industry, have revived interest in …

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …

A definition of the electric polarization of an insulating crystalline solid is given in terms of the
centers of charge of the Wannier functions of the occupied bands. The change of this …

Theoretical models of Schottky-barrier height formation are reviewed. A particular emphasis
is placed on the examination of how these models agree with general physical principles …

The ability to engineer a photoelectrode surface is pivotal for optimizing the properties of any
photoelectrode used for solar fuel production. Altering crystal facets exposed on the surface …

Whenever a compound crystal is cut normal to a randomly chosen direction, there is an
overwhelming probability that the resulting surface corresponds to a polar termination and is …