Abstract The International Roadmap for Devices and Systems (IRDS) forecasts that, for
silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling …

Unlike graphene which requires redesigned fabrication technique, silicene is predicted to be
compatible with the silicon wafer technology. However, similar to graphene, the gapless …

Abstract jats: pThe carriers in a carbon nanotube (CNT), like in any quasi-1-dimensional
(Q1D) nanostructure, have analog energy spectrum only in the quasifree direction; while the …

Silicene, a 2D allotrope of silicon, is predicted to be a potential material for future transistor
that might be compatible with present silicon fabrication technology. Similar to graphene …

In this work, we investigate the effect of Indium Oxide (In 2 O 3) on the microstructural,
optical, optoelectrical, and electrical properties of Porous Silicon (PS) layer. PS film was …

Brings the Band Structure of Carbon-Based Devices into the Limelight A shift to carbon is
positioning biology as a process of synthesis in mainstream engineering. Silicon is quickly …

A novel full adder circuit is presented. The main aim is to reduce power delay product (PDP)
in the presented full adder cell. A new method is used in order to design a full‐swing full …

We present a novel analytical modeling of a zigzag single-walled semiconducting carbon
nanotube field effect transistor (CNFET) by incorporating quasi-one-dimensional (Q1D) top …

This paper presents the results of the effect of Indium oxide (In 2 O 3) on the structural,
optical, and optoelectronic properties of porous silicon (PS). The results show an important …

A three-dimensional finite element solver is applied to investigate the performance of Ga 2 O
3/GaN nanowire transistors. Experimental nanowire results of 50 nm gate length are …