Vapor phase growth of semiconductor nanowires: key developments and open questions
Nanowires are filamentary crystals with a tailored diameter that can be obtained using a
plethora of different synthesis techniques. In this review, we focus on the vapor phase …
plethora of different synthesis techniques. In this review, we focus on the vapor phase …
Semiconductor nanowires: to grow or not to grow?
Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …
[LIVRE][B] Nucleation theory and growth of nanostructures
VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
Temporal constraints on hydrate-controlled methane seepage off Svalbard
Methane hydrate is an icelike substance that is stable at high pressure and low temperature
in continental margin sediments. Since the discovery of a large number of gas flares at the …
in continental margin sediments. Since the discovery of a large number of gas flares at the …
Predictive modeling of self-catalyzed III-V nanowire growth
We develop a quantitative model of the self-catalyzed vapor-liquid-solid growth of GaAs
nanowires, that depends on only a few a priori unknown physical parameters. The model is …
nanowires, that depends on only a few a priori unknown physical parameters. The model is …
A general approach for sharp crystal phase switching in InAs, GaAs, InP, and GaP nanowires using only group V flow
III–V-based nanowires usually exhibit random mixtures of wurtzite (WZ) and zinc blende (ZB)
crystal structure, and pure crystal phase wires represent the exception rather than the rule. In …
crystal structure, and pure crystal phase wires represent the exception rather than the rule. In …
Epitaxy of GaN nanowires on graphene
V Kumaresan, L Largeau, A Madouri, F Glas… - Nano …, 2016 - ACS Publications
Epitaxial growth of GaN nanowires on graphene is demonstrated using molecular beam
epitaxy without any catalyst or intermediate layer. Growth is highly selective with respect to …
epitaxy without any catalyst or intermediate layer. Growth is highly selective with respect to …
Do** of semiconductor nanowires
A cornerstone in the successful application of semiconductor nanowire devices is controlled
impurity do**. In this review article, we discuss the key results in the field of semiconductor …
impurity do**. In this review article, we discuss the key results in the field of semiconductor …
Advances in the theory of III–V nanowire growth dynamics
P Krogstrup, HI Jørgensen, E Johnson… - Journal of Physics D …, 2013 - iopscience.iop.org
Nanowire (NW) crystal growth via the vapour–liquid–solid mechanism is a complex dynamic
process involving interactions between many atoms of various thermodynamic states. With …
process involving interactions between many atoms of various thermodynamic states. With …
Three-dimensional multiple-order twinning of self-catalyzed GaAs nanowires on Si substrates
In this paper we introduce a new paradigm for nanowire growth that explains the unwanted
appearance of parasitic nonvertical nanowires. With a crystal structure polarization analysis …
appearance of parasitic nonvertical nanowires. With a crystal structure polarization analysis …