Vapor phase growth of semiconductor nanowires: key developments and open questions

L Güniat, P Caroff, A Fontcuberta i Morral - Chemical reviews, 2019 - ACS Publications
Nanowires are filamentary crystals with a tailored diameter that can be obtained using a
plethora of different synthesis techniques. In this review, we focus on the vapor phase …

Semiconductor nanowires: to grow or not to grow?

PC McIntyre, AF i Morral - Materials Today Nano, 2020 - Elsevier
Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …

[LIVRE][B] Nucleation theory and growth of nanostructures

VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …

Temporal constraints on hydrate-controlled methane seepage off Svalbard

C Berndt, T Feseker, T Treude, S Krastel, V Liebetrau… - Science, 2014 - science.org
Methane hydrate is an icelike substance that is stable at high pressure and low temperature
in continental margin sediments. Since the discovery of a large number of gas flares at the …

Predictive modeling of self-catalyzed III-V nanowire growth

F Glas, MR Ramdani, G Patriarche, JC Harmand - Physical Review B …, 2013 - APS
We develop a quantitative model of the self-catalyzed vapor-liquid-solid growth of GaAs
nanowires, that depends on only a few a priori unknown physical parameters. The model is …

A general approach for sharp crystal phase switching in InAs, GaAs, InP, and GaP nanowires using only group V flow

S Lehmann, J Wallentin, D Jacobsson, K Deppert… - Nano …, 2013 - ACS Publications
III–V-based nanowires usually exhibit random mixtures of wurtzite (WZ) and zinc blende (ZB)
crystal structure, and pure crystal phase wires represent the exception rather than the rule. In …

Epitaxy of GaN nanowires on graphene

V Kumaresan, L Largeau, A Madouri, F Glas… - Nano …, 2016 - ACS Publications
Epitaxial growth of GaN nanowires on graphene is demonstrated using molecular beam
epitaxy without any catalyst or intermediate layer. Growth is highly selective with respect to …

Do** of semiconductor nanowires

J Wallentin, MT Borgström - Journal of Materials Research, 2011 - cambridge.org
A cornerstone in the successful application of semiconductor nanowire devices is controlled
impurity do**. In this review article, we discuss the key results in the field of semiconductor …

Advances in the theory of III–V nanowire growth dynamics

P Krogstrup, HI Jørgensen, E Johnson… - Journal of Physics D …, 2013 - iopscience.iop.org
Nanowire (NW) crystal growth via the vapour–liquid–solid mechanism is a complex dynamic
process involving interactions between many atoms of various thermodynamic states. With …

Three-dimensional multiple-order twinning of self-catalyzed GaAs nanowires on Si substrates

E Uccelli, J Arbiol, C Magen, P Krogstrup… - Nano …, 2011 - ACS Publications
In this paper we introduce a new paradigm for nanowire growth that explains the unwanted
appearance of parasitic nonvertical nanowires. With a crystal structure polarization analysis …